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JPS57161516A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS57161516A
JPS57161516A JP4650581A JP4650581A JPS57161516A JP S57161516 A JPS57161516 A JP S57161516A JP 4650581 A JP4650581 A JP 4650581A JP 4650581 A JP4650581 A JP 4650581A JP S57161516 A JPS57161516 A JP S57161516A
Authority
JP
Japan
Prior art keywords
mos transistors
resistor
point
constituted
coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4650581A
Other languages
Japanese (ja)
Inventor
Nobuaki Miyagawa
Toji Mukai
Takahide Ikeda
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4650581A priority Critical patent/JPS57161516A/en
Publication of JPS57161516A publication Critical patent/JPS57161516A/en
Pending legal-status Critical Current

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

PURPOSE: To make the detection with high accuracy and sensitivity in a wide range possible by setting a biasing point at the point where a linear area can be made largest, coupling respective amplifiers by means of AC and outputting only the change component of light signals.
CONSTITUTION: A resistor 201 is connected to an electric power source 200 and an inverter amplifier constituted of MOS transistors 204, 205 is conncted thereto via a capacitor 202 which is connected at one end to the resistor 201. Further, an operation point setting circuit constituted of MOS transistors 206, 207 is connected thereto. Also, (p) channel MOS transistors 210, 220 having the coupling capacity of the same value as MOS transistors 60W6n and 203, but operate reversely to them in phase are disposed to reduce switching noise.
COPYRIGHT: (C)1982,JPO&Japio
JP4650581A 1981-03-31 1981-03-31 Semiconductor photodetector Pending JPS57161516A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4650581A JPS57161516A (en) 1981-03-31 1981-03-31 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4650581A JPS57161516A (en) 1981-03-31 1981-03-31 Semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS57161516A true JPS57161516A (en) 1982-10-05

Family

ID=12749099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4650581A Pending JPS57161516A (en) 1981-03-31 1981-03-31 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS57161516A (en)

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