JPS57149731A - Exposing device - Google Patents
Exposing deviceInfo
- Publication number
- JPS57149731A JPS57149731A JP56035070A JP3507081A JPS57149731A JP S57149731 A JPS57149731 A JP S57149731A JP 56035070 A JP56035070 A JP 56035070A JP 3507081 A JP3507081 A JP 3507081A JP S57149731 A JPS57149731 A JP S57149731A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chuck
- constitution
- pipe
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To prevent the temperature rise of the surface when exposing, and to obtain a minute pattern by forming an ejecting port contacting a gas controlled at a peripheral temperature or lower with the surface of a wafer. CONSTITUTION:The wafer 2 is placed on a base 1, and mounted under a chuck 3 for forming the flatness of the surface of the wafer. N2 cooled is ejected from the pipe 4 of the chuck 3, passed through the surface of the wafer and discharged from a pipe 5. Beams 6 passing an optical system are imaged onto the wafer 2. According to this constitution, the minute pattern of submicron can be worked particularly at desired accuracy because the temperature rise (approximately 2 deg.C) of the surface of the wafer through exposure can be prevented and undesired treatment due to a temperature change is obviated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56035070A JPS57149731A (en) | 1981-03-11 | 1981-03-11 | Exposing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56035070A JPS57149731A (en) | 1981-03-11 | 1981-03-11 | Exposing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57149731A true JPS57149731A (en) | 1982-09-16 |
Family
ID=12431742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56035070A Pending JPS57149731A (en) | 1981-03-11 | 1981-03-11 | Exposing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57149731A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132127A (en) * | 1983-01-19 | 1984-07-30 | Toshiba Corp | Method and apparatus for forming resist pattern |
JPS59132618A (en) * | 1983-01-19 | 1984-07-30 | Toshiba Corp | Method and apparatus for forming resist pattern |
JPS59132619A (en) * | 1983-01-19 | 1984-07-30 | Toshiba Corp | Method and apparatus for forming resist pattern |
US4897337A (en) * | 1983-01-19 | 1990-01-30 | Tokyo Shibaura Denki Kabushiki Kaisha | Method and apparatus for forming resist pattern |
WO2005096101A1 (en) * | 2004-03-30 | 2005-10-13 | Pioneer Corporation | Exposure equipment |
WO2016169758A1 (en) * | 2015-04-21 | 2016-10-27 | Asml Netherlands B.V. | Lithographic apparatus |
WO2018041599A1 (en) * | 2016-09-02 | 2018-03-08 | Asml Netherlands B.V. | Lithographic apparatus |
US10453734B2 (en) | 2015-07-02 | 2019-10-22 | Asml Netherlands B.V. | Substrate holder, a lithographic apparatus and method of manufacturing devices |
-
1981
- 1981-03-11 JP JP56035070A patent/JPS57149731A/en active Pending
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132127A (en) * | 1983-01-19 | 1984-07-30 | Toshiba Corp | Method and apparatus for forming resist pattern |
JPS59132618A (en) * | 1983-01-19 | 1984-07-30 | Toshiba Corp | Method and apparatus for forming resist pattern |
JPS59132619A (en) * | 1983-01-19 | 1984-07-30 | Toshiba Corp | Method and apparatus for forming resist pattern |
US4897337A (en) * | 1983-01-19 | 1990-01-30 | Tokyo Shibaura Denki Kabushiki Kaisha | Method and apparatus for forming resist pattern |
JPH0480531B2 (en) * | 1983-01-19 | 1992-12-18 | Tokyo Shibaura Electric Co | |
WO2005096101A1 (en) * | 2004-03-30 | 2005-10-13 | Pioneer Corporation | Exposure equipment |
WO2016169758A1 (en) * | 2015-04-21 | 2016-10-27 | Asml Netherlands B.V. | Lithographic apparatus |
CN107771303A (en) * | 2015-04-21 | 2018-03-06 | Asml荷兰有限公司 | Lithographic equipment |
JP2018513421A (en) * | 2015-04-21 | 2018-05-24 | エーエスエムエル ネザーランズ ビー.ブイ. | Lithographic apparatus |
JP2021176018A (en) * | 2015-04-21 | 2021-11-04 | エーエスエムエル ネザーランズ ビー.ブイ. | Cooling apparatus and method of using the same, and lithographic apparatus |
US10416574B2 (en) | 2015-04-21 | 2019-09-17 | Asml Netherlands B.V | Lithographic apparatus |
US10935895B2 (en) | 2015-04-21 | 2021-03-02 | Asml Netherlands B.V. | Lithographic apparatus |
US10453734B2 (en) | 2015-07-02 | 2019-10-22 | Asml Netherlands B.V. | Substrate holder, a lithographic apparatus and method of manufacturing devices |
WO2018041599A1 (en) * | 2016-09-02 | 2018-03-08 | Asml Netherlands B.V. | Lithographic apparatus |
US10747127B2 (en) | 2016-09-02 | 2020-08-18 | Asml Netherlands B.V. | Lithographic apparatus |
JP2019529982A (en) * | 2016-09-02 | 2019-10-17 | エーエスエムエル ネザーランズ ビー.ブイ. | Lithographic apparatus |
CN109804313A (en) * | 2016-09-02 | 2019-05-24 | Asml荷兰有限公司 | Lithographic equipment |
CN109804313B (en) * | 2016-09-02 | 2024-06-25 | Asml荷兰有限公司 | Lithographic apparatus |
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