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JPS57135711A - Preparation of high purity silicon tetrafluoride - Google Patents

Preparation of high purity silicon tetrafluoride

Info

Publication number
JPS57135711A
JPS57135711A JP2011381A JP2011381A JPS57135711A JP S57135711 A JPS57135711 A JP S57135711A JP 2011381 A JP2011381 A JP 2011381A JP 2011381 A JP2011381 A JP 2011381A JP S57135711 A JPS57135711 A JP S57135711A
Authority
JP
Japan
Prior art keywords
sulfuric acid
sif
reaction
high purity
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011381A
Other languages
Japanese (ja)
Other versions
JPS604125B2 (en
Inventor
Toyozo Otsuka
Naomichi Kitsugi
Teruo Fujinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Priority to JP2011381A priority Critical patent/JPS604125B2/en
Priority to GB8119767A priority patent/GB2079262B/en
Priority to DE3125989A priority patent/DE3125989C2/en
Priority to FR8112956A priority patent/FR2488238B1/en
Priority to US06/279,614 priority patent/US4382071A/en
Priority to IT22716/81A priority patent/IT1137189B/en
Publication of JPS57135711A publication Critical patent/JPS57135711A/en
Publication of JPS604125B2 publication Critical patent/JPS604125B2/en
Expired legal-status Critical Current

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  • Silicon Compounds (AREA)

Abstract

PURPOSE: To prepare high purity SiF4 having extremely low hexafluorodisiloxane content, by maintaining the concentration of sulfuric acid used as a reaction medium above a specific level in the catalytic reaction of SiO2 with HF in the presence of sulfuric acid.
CONSTITUTION: Amorphous or crystalline SiO2 is dispersed in sulfuric acid of ≥80% concentration, and hydrofluoric acid or anhydrous HF is added to the dispersion to generate SiF4. The sulfuric acid is diluted as the reaction proceeds with H2O produced as a by-product of the reaction. Accordingly, the concentration is maintained to ≥80% by a proper means, e.g. by adding 98% sulfuric acid or fuming sulfuric acid to the reaction system in the course of the reaction. High purity SiF4 having extremely low hexafluorodisiloxane (SiF3-O-SiF3) content and suitable for the manufacturing of an amorphous Si layer for solar battery, can be obtained by the process.
COPYRIGHT: (C)1982,JPO&Japio
JP2011381A 1980-07-02 1981-02-16 Manufacturing method of high purity silicon tetrafluoride Expired JPS604125B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011381A JPS604125B2 (en) 1981-02-16 1981-02-16 Manufacturing method of high purity silicon tetrafluoride
GB8119767A GB2079262B (en) 1980-07-02 1981-06-26 Process of preparing silicon tetrafluoride by using hydrogen fluoride gas
DE3125989A DE3125989C2 (en) 1980-07-02 1981-07-01 Process for the production of silicon tetrafluoride using gaseous hydrogen fluoride
FR8112956A FR2488238B1 (en) 1980-07-02 1981-07-01 PROCESS FOR THE PREPARATION OF SILICON TETRAFLUORIDE USING HYDROGEN GAS FLUORIDE
US06/279,614 US4382071A (en) 1980-07-02 1981-07-01 Process of preparing silicon tetrafluoride by using hydrogen fluoride gas
IT22716/81A IT1137189B (en) 1980-07-02 1981-07-02 SILICON TETRAFLUORIDE PREPARATION PROCESS USING GASEOUS FLUORIDIC ACID

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011381A JPS604125B2 (en) 1981-02-16 1981-02-16 Manufacturing method of high purity silicon tetrafluoride

Publications (2)

Publication Number Publication Date
JPS57135711A true JPS57135711A (en) 1982-08-21
JPS604125B2 JPS604125B2 (en) 1985-02-01

Family

ID=12018059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011381A Expired JPS604125B2 (en) 1980-07-02 1981-02-16 Manufacturing method of high purity silicon tetrafluoride

Country Status (1)

Country Link
JP (1) JPS604125B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009005412A2 (en) 2007-06-19 2009-01-08 Zakrytoe Aktsionernoe Obschestvo 'solar Si' Method for producing polycrystalline silicon
US7666379B2 (en) 2001-07-16 2010-02-23 Voltaix, Inc. Process and apparatus for removing Bronsted acid impurities in binary halides
JP2010532302A (en) * 2007-08-23 2010-10-07 ザクリトエ、アクツィオネルノエ、オブシェストボ、“ソーラー、エスアイ” Technology for the production of polycrystalline silicon from fluorosilicic acid solution and equipment for its production
WO2011136517A2 (en) * 2010-04-27 2011-11-03 Kcc Corporation Method of preparing silicon tetrafluoride by using crystalline silica
KR101183367B1 (en) * 2010-07-22 2012-09-14 (주)후성 Method for producing silicon tetrafluoride and appartus used therefor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7666379B2 (en) 2001-07-16 2010-02-23 Voltaix, Inc. Process and apparatus for removing Bronsted acid impurities in binary halides
WO2009005412A2 (en) 2007-06-19 2009-01-08 Zakrytoe Aktsionernoe Obschestvo 'solar Si' Method for producing polycrystalline silicon
WO2009005412A3 (en) * 2007-06-19 2009-05-28 Zakrytoe Aktsionernoe Obschest Method for producing polycrystalline silicon
EA015477B1 (en) * 2007-06-19 2011-08-30 Закрытое Акционерное Общество "Солар Си" Method for producing polycrystalline silicon from a hydrosilicofluoric acid solution and a plant for producing polycrystalline silicon
JP2010532302A (en) * 2007-08-23 2010-10-07 ザクリトエ、アクツィオネルノエ、オブシェストボ、“ソーラー、エスアイ” Technology for the production of polycrystalline silicon from fluorosilicic acid solution and equipment for its production
WO2011136517A2 (en) * 2010-04-27 2011-11-03 Kcc Corporation Method of preparing silicon tetrafluoride by using crystalline silica
WO2011136517A3 (en) * 2010-04-27 2012-03-08 Kcc Corporation Method of preparing silicon tetrafluoride by using crystalline silica
KR101183367B1 (en) * 2010-07-22 2012-09-14 (주)후성 Method for producing silicon tetrafluoride and appartus used therefor

Also Published As

Publication number Publication date
JPS604125B2 (en) 1985-02-01

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