JPS57134235A - Production of polycrystalline silicon semiconductor - Google Patents
Production of polycrystalline silicon semiconductorInfo
- Publication number
- JPS57134235A JPS57134235A JP1742181A JP1742181A JPS57134235A JP S57134235 A JPS57134235 A JP S57134235A JP 1742181 A JP1742181 A JP 1742181A JP 1742181 A JP1742181 A JP 1742181A JP S57134235 A JPS57134235 A JP S57134235A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline
- molds
- ingot
- production
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- 239000006082 mold release agent Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C3/00—Selection of compositions for coating the surfaces of moulds, cores, or patterns
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
- Mold Materials And Core Materials (AREA)
Abstract
PURPOSE:To make the production of polycrystalline Si of large crystal grains possible in the production of a polycrystalline semiconductor by coating a mold release agent of silicon nitride on the inside surface of molds which are divided longitudinally, and producing melt of high purity Si. CONSTITUTION:A mold made of quartz and silicon nitride is made dividable longitudinally to >=2 parts, and powder of silicon nitride is coated uniformly as a mold release agent on the inside surfaces thereof. This split molds are put into a graphite crucible and while they are heated therein, high purity Si is put into the split molds and melted, after which it is cooled slowly in the molds, so that it is solidified to a polycrystalline Si ingot of large crystal grains. The molds are removed from the graphite crucible, and are divided, then, the polycrystalline Si ingot is removed therefrom. The perfect polycrystalline Si ingot is obtained easily without generating cracks in the polycrystalline Si ingot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1742181A JPS609656B2 (en) | 1981-02-10 | 1981-02-10 | Method for manufacturing polycrystalline silicon semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1742181A JPS609656B2 (en) | 1981-02-10 | 1981-02-10 | Method for manufacturing polycrystalline silicon semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57134235A true JPS57134235A (en) | 1982-08-19 |
| JPS609656B2 JPS609656B2 (en) | 1985-03-12 |
Family
ID=11943541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1742181A Expired JPS609656B2 (en) | 1981-02-10 | 1981-02-10 | Method for manufacturing polycrystalline silicon semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS609656B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6149416A (en) * | 1984-08-17 | 1986-03-11 | Hoxan Corp | Coating method of carbon tray for manufacturing polycrystalline silicon wafer |
| JPH0484467A (en) * | 1990-07-27 | 1992-03-17 | Mitsubishi Electric Corp | Manufacture of solar cell |
| US20100290946A1 (en) * | 2009-05-14 | 2010-11-18 | Glen Bennett Cook | Methods of making an article of semiconducting material on a mold comprising semiconducting material |
-
1981
- 1981-02-10 JP JP1742181A patent/JPS609656B2/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6149416A (en) * | 1984-08-17 | 1986-03-11 | Hoxan Corp | Coating method of carbon tray for manufacturing polycrystalline silicon wafer |
| JPH038579B2 (en) * | 1984-08-17 | 1991-02-06 | Hokusan Kk | |
| JPH0484467A (en) * | 1990-07-27 | 1992-03-17 | Mitsubishi Electric Corp | Manufacture of solar cell |
| US20100290946A1 (en) * | 2009-05-14 | 2010-11-18 | Glen Bennett Cook | Methods of making an article of semiconducting material on a mold comprising semiconducting material |
| US8398768B2 (en) * | 2009-05-14 | 2013-03-19 | Corning Incorporated | Methods of making an article of semiconducting material on a mold comprising semiconducting material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS609656B2 (en) | 1985-03-12 |
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