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JPS57121288A - Hall element - Google Patents

Hall element

Info

Publication number
JPS57121288A
JPS57121288A JP56007604A JP760481A JPS57121288A JP S57121288 A JPS57121288 A JP S57121288A JP 56007604 A JP56007604 A JP 56007604A JP 760481 A JP760481 A JP 760481A JP S57121288 A JPS57121288 A JP S57121288A
Authority
JP
Japan
Prior art keywords
electrode
temperature
electrodes
auxiliary electrode
temperature compensating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56007604A
Other languages
Japanese (ja)
Other versions
JPH0226795B2 (en
Inventor
Yuzo Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP56007604A priority Critical patent/JPS57121288A/en
Publication of JPS57121288A publication Critical patent/JPS57121288A/en
Publication of JPH0226795B2 publication Critical patent/JPH0226795B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To obtain a Hall element having low temperature dependency by providing an auxiliary electrode together with a pair of input electrodes and a pair of output electrodes on a thin semiconductor plate, thereby compensating the output voltage. CONSTITUTION:The first temperature compensating part 12 is composed of a thin semiconductor plate 7 between one input electrode 9a and the first auxiliary electrode 11a of a pair of input electrodes provided at both ends of the plate 7. The second temperature compensating part 13 is composed between the other input electrode 9b and the second auxiliary electrode 11b, and a part 14 to be compensated is composed between the electrodes 11a and 11b. The third temperature compensating part 18 is composed of the plate 7 between one output electrode 15 a and the third auxiliary electrode 17a. the fourth temperature compensating part 19 is composed between the other output electrode 15b and the fourth auxiliary electrode 17b. When a current is flowed to the part 14 and a magnetic field is applied to the part, an output voltage is produced between the electrodes 15a and 15b, and the temperature can be compesated by the temperature deepen dency of the resistance value of the temperature compensating parts.
JP56007604A 1981-01-20 1981-01-20 Hall element Granted JPS57121288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56007604A JPS57121288A (en) 1981-01-20 1981-01-20 Hall element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56007604A JPS57121288A (en) 1981-01-20 1981-01-20 Hall element

Publications (2)

Publication Number Publication Date
JPS57121288A true JPS57121288A (en) 1982-07-28
JPH0226795B2 JPH0226795B2 (en) 1990-06-12

Family

ID=11670399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56007604A Granted JPS57121288A (en) 1981-01-20 1981-01-20 Hall element

Country Status (1)

Country Link
JP (1) JPS57121288A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843311A (en) * 1986-07-15 1989-06-27 Iskra-Sozd Elektrokovinske Industrije N .Sol.O. Wattmeter comprising a hall sensor and an A/D converter
US5162886A (en) * 1990-05-21 1992-11-10 Sumitomo Electric Industries Ltd. Hall device
US5252840A (en) * 1990-05-17 1993-10-12 Sumitomo Electric Industries, Ltd. Semiconductor device having differently doped diamond layers

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05164088A (en) * 1991-12-11 1993-06-29 Sharp Corp Electric fan

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138887A (en) * 1979-04-17 1980-10-30 Denki Onkyo Co Ltd Hall element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138887A (en) * 1979-04-17 1980-10-30 Denki Onkyo Co Ltd Hall element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843311A (en) * 1986-07-15 1989-06-27 Iskra-Sozd Elektrokovinske Industrije N .Sol.O. Wattmeter comprising a hall sensor and an A/D converter
US5252840A (en) * 1990-05-17 1993-10-12 Sumitomo Electric Industries, Ltd. Semiconductor device having differently doped diamond layers
US5162886A (en) * 1990-05-21 1992-11-10 Sumitomo Electric Industries Ltd. Hall device

Also Published As

Publication number Publication date
JPH0226795B2 (en) 1990-06-12

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