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JPS57118665A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57118665A
JPS57118665A JP56005705A JP570581A JPS57118665A JP S57118665 A JPS57118665 A JP S57118665A JP 56005705 A JP56005705 A JP 56005705A JP 570581 A JP570581 A JP 570581A JP S57118665 A JPS57118665 A JP S57118665A
Authority
JP
Japan
Prior art keywords
layer
specific resistance
power transistor
circuit element
signal circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56005705A
Other languages
Japanese (ja)
Inventor
Kunihiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56005705A priority Critical patent/JPS57118665A/en
Priority to DE19813117837 priority patent/DE3117837A1/en
Priority to FR8109596A priority patent/FR2482684A1/en
Publication of JPS57118665A publication Critical patent/JPS57118665A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the characteristics of the minor signal circuit element for the subject device without deteriorating the characteristics of a power transistor by a method wherein a double-layer epitaxial layer, having different specific resistance, is provided. CONSTITUTION:In the bipolar type integrated circuit element wherein a power transistor and a minor signal circuit element are constituted on the same chip, an N<-> layer 22 of a high specific resistance is provided on an N type silicon substrate 21, and an N-layer 23 of a low specific resistance is epitaxially grown on the above N-layer 22. Subsequently, a P type base region 24 is formed at the section where the power transistor will be formed, and then an N type emitter 25 is formed. Also, the minor signal circuit element is provided on the other region of the N-layer 23 of low specific resistance. Then, a contact hole is opened on an insulating layer 26, a base electrode, emitter electrodes 27 and 28 are formed, and then a collector 29 is provided on the reverse side of the substrate. Accordngly, the characteristics of the minor signal circuit can be improved without deteriorating the withstand voltage characteristics of the power transistor.
JP56005705A 1980-05-16 1981-01-16 Semiconductor integrated circuit device Pending JPS57118665A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56005705A JPS57118665A (en) 1981-01-16 1981-01-16 Semiconductor integrated circuit device
DE19813117837 DE3117837A1 (en) 1980-05-16 1981-05-06 Universal joint
FR8109596A FR2482684A1 (en) 1980-05-16 1981-05-14 UNIVERSAL CROSSED JOINT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56005705A JPS57118665A (en) 1981-01-16 1981-01-16 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57118665A true JPS57118665A (en) 1982-07-23

Family

ID=11618521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56005705A Pending JPS57118665A (en) 1980-05-16 1981-01-16 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57118665A (en)

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