JPS57118217A - Production of electrode for liquid crystal display panel - Google Patents
Production of electrode for liquid crystal display panelInfo
- Publication number
- JPS57118217A JPS57118217A JP427481A JP427481A JPS57118217A JP S57118217 A JPS57118217 A JP S57118217A JP 427481 A JP427481 A JP 427481A JP 427481 A JP427481 A JP 427481A JP S57118217 A JPS57118217 A JP S57118217A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- lead wire
- terms
- adhesive strength
- nickel plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 4
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 2
- 229910018104 Ni-P Inorganic materials 0.000 abstract 1
- 229910018536 Ni—P Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical class O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
PURPOSE:To keep the voltage applied to each electrode of a panel at a certain level, by providing a metallic lead wire having a small width and a low resistance value on a transparent conductive film and thus avoiding the voltage drop caused by the resistance of the electrode film. CONSTITUTION:An Ni-P group bath of hypophosphite salt is preferably used for the electroless nickel plating both used at a lead wire part of a matrix panel in terms of the high adhesive strength to a transparent electrode film on a substrate and a low level of electric resistance. The thickness of the metallic skin requires 4,000Angstrom for the electrode at the data side and 1.6mu for the electrode at the driving side respectively. The heat treatment is preferably carried out for an hour at 200-400 deg.C in the air or in the N2 atmosphere in terms of the adhesive strength and the resistance value. It is possible to apply the nickel plating after a preprocess by which only the area on the transparent conductive film is selectively plated. This method can reduce the cost and increase the production efficiency in comparison with the vapor deposition method since no Au is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP427481A JPS57118217A (en) | 1981-01-14 | 1981-01-14 | Production of electrode for liquid crystal display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP427481A JPS57118217A (en) | 1981-01-14 | 1981-01-14 | Production of electrode for liquid crystal display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57118217A true JPS57118217A (en) | 1982-07-23 |
Family
ID=11579955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP427481A Pending JPS57118217A (en) | 1981-01-14 | 1981-01-14 | Production of electrode for liquid crystal display panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57118217A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH032725A (en) * | 1989-05-30 | 1991-01-09 | Seiko Epson Corp | liquid crystal device |
| US5113181A (en) * | 1986-02-21 | 1992-05-12 | Canon Kabushiki Kaisha | Display apparatus |
| EP2204692A1 (en) * | 2000-11-21 | 2010-07-07 | Transpacific Infinity, LLC | Electrode structure which supports self alignment of liquid deposition of materials |
-
1981
- 1981-01-14 JP JP427481A patent/JPS57118217A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5113181A (en) * | 1986-02-21 | 1992-05-12 | Canon Kabushiki Kaisha | Display apparatus |
| JPH032725A (en) * | 1989-05-30 | 1991-01-09 | Seiko Epson Corp | liquid crystal device |
| EP2204692A1 (en) * | 2000-11-21 | 2010-07-07 | Transpacific Infinity, LLC | Electrode structure which supports self alignment of liquid deposition of materials |
| US8339551B2 (en) | 2000-11-21 | 2012-12-25 | Transpacific Infinity, Llc | Electrode structure which supports self alignment of liquid deposition of materials |
| US8593604B2 (en) | 2000-11-21 | 2013-11-26 | Transpacific Infinity, Llc | Electrode structure which supports self alignment of liquid deposition of materials |
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