[go: up one dir, main page]

JPS5711813A - Preparation of carbide film resistor - Google Patents

Preparation of carbide film resistor

Info

Publication number
JPS5711813A
JPS5711813A JP8555380A JP8555380A JPS5711813A JP S5711813 A JPS5711813 A JP S5711813A JP 8555380 A JP8555380 A JP 8555380A JP 8555380 A JP8555380 A JP 8555380A JP S5711813 A JPS5711813 A JP S5711813A
Authority
JP
Japan
Prior art keywords
gas
substrate
film resistor
sputtering
carbide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8555380A
Other languages
Japanese (ja)
Other versions
JPS6322043B2 (en
Inventor
Kazushi Yamamoto
Takeshi Nagai
Ikuo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8555380A priority Critical patent/JPS5711813A/en
Priority to AU63093/80A priority patent/AU524439B2/en
Priority to GB8032616A priority patent/GB2061002B/en
Priority to US06/196,011 priority patent/US4359372A/en
Priority to CA000362125A priority patent/CA1143865A/en
Priority to DE3038375A priority patent/DE3038375C2/en
Priority to FR8022342A priority patent/FR2467472A1/en
Publication of JPS5711813A publication Critical patent/JPS5711813A/en
Publication of JPS6322043B2 publication Critical patent/JPS6322043B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermistors And Varistors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

PURPOSE:To prepare a carbide film resistor having low resistance, resistivity, etc., economically, in a short time, by sputtering a carbide resistor material to a substrate in an atmosphere composed of rare gas containing slight amounts of one or more impurity gases selected from N2, CO2 and CO. CONSTITUTION:The insulating substrate 1 made of alumina, etc. is provided with an electrode 2 made of electrically conductive paste such as Ag, etc. The substrate 2 is sputtered with a target material, e.g. sintered silicon carbide. The sputtering is carried out at a substrate temperature of e.g. 650 deg.C, in a vacuum chamber evacuated to 10<-6>Torr under the sputtering pressure of e.g. 10<-2>Torr in rare gas atmosphere (e.g. Ar gas) containing slight amount of impurity gas (e.g. N2 gas). The amount of the impurity gas is at least >=0-2.5vol% based on the rare gas. The carbide film resistor deposited on the substrate has the same composition as the target material.
JP8555380A 1979-10-11 1980-06-23 Preparation of carbide film resistor Granted JPS5711813A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP8555380A JPS5711813A (en) 1980-06-23 1980-06-23 Preparation of carbide film resistor
AU63093/80A AU524439B2 (en) 1979-10-11 1980-10-09 Sputtered thin film thermistor
GB8032616A GB2061002B (en) 1979-10-11 1980-10-09 Method for making a carbide thin film thermistor
US06/196,011 US4359372A (en) 1979-10-11 1980-10-10 Method for making a carbide thin film thermistor
CA000362125A CA1143865A (en) 1979-10-11 1980-10-10 Method for making a carbide thin film thermistor
DE3038375A DE3038375C2 (en) 1979-10-11 1980-10-10 Method of manufacturing an NTC thermistor with carbide resistor thin films
FR8022342A FR2467472A1 (en) 1979-10-11 1980-10-13 PROCESS FOR PRODUCING CARBIDE THIN FILM THERMISTOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8555380A JPS5711813A (en) 1980-06-23 1980-06-23 Preparation of carbide film resistor

Publications (2)

Publication Number Publication Date
JPS5711813A true JPS5711813A (en) 1982-01-21
JPS6322043B2 JPS6322043B2 (en) 1988-05-10

Family

ID=13862017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8555380A Granted JPS5711813A (en) 1979-10-11 1980-06-23 Preparation of carbide film resistor

Country Status (1)

Country Link
JP (1) JPS5711813A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148428A (en) * 1982-03-01 1983-09-03 Nec Corp Formation of insulating film
JPH0415908A (en) * 1990-05-09 1992-01-21 Shin Etsu Chem Co Ltd Manufacture of composite membrane made of sic and si3n4 and mask for x-ray lithography
JP2001220237A (en) * 2000-02-14 2001-08-14 Asahi Glass Co Ltd Silicon carbide body and method for producing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363553A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Method of manufacturing thermistor
JPS6122444A (en) * 1984-07-10 1986-01-31 Toshiba Corp Optical disc reproducing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363553A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Method of manufacturing thermistor
JPS6122444A (en) * 1984-07-10 1986-01-31 Toshiba Corp Optical disc reproducing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148428A (en) * 1982-03-01 1983-09-03 Nec Corp Formation of insulating film
JPH0519302B2 (en) * 1982-03-01 1993-03-16 Nippon Electric Co
JPH0415908A (en) * 1990-05-09 1992-01-21 Shin Etsu Chem Co Ltd Manufacture of composite membrane made of sic and si3n4 and mask for x-ray lithography
JP2001220237A (en) * 2000-02-14 2001-08-14 Asahi Glass Co Ltd Silicon carbide body and method for producing the same

Also Published As

Publication number Publication date
JPS6322043B2 (en) 1988-05-10

Similar Documents

Publication Publication Date Title
US4016061A (en) Method of making resistive films
GB1325961A (en) Feroelectric device and process of manufacturing same
US4627902A (en) Method of producing a resistance element for a resistance thermometer
US6365014B2 (en) Cathode targets of silicon and transition metal
Igasaki et al. Some properties of Al-doped ZnO transparent conducting films prepared by RF reactive sputtering
GB1118758A (en) Improvements in or relating to the sputtering of conductive materials
JPS5711813A (en) Preparation of carbide film resistor
JPH0344465A (en) Production of sputtering target for electrically conductive transparent ito film
JPH1088332A (en) Sputtering target, transparent conductive coating and its production
JPH07196365A (en) Sintered ito, ito clear conductive layer and formation thereof
JPH0121109B2 (en)
JPS5711811A (en) Preparation of carbide film resistor
Adachi et al. Superconducting thin films of Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O with Tc above 100 K
JPS5711812A (en) Preparation of carbide film resistor
JPS569249A (en) Electrically conductive infrared shielding glass and its manufacture
Koltai et al. Segregation phenomena in thin NiCr layers
NL6615850A (en)
US6793781B2 (en) Cathode targets of silicon and transition metal
US3803057A (en) Resistive materials and method of making such materials
Ojha The deposition of cermet films from a powder target by RF sputtering
GB1133402A (en) Improvements relating to stable nickel-chromium resistance films
JPH04341707A (en) Transparent conductive film
JPH0765167B2 (en) Sputtering target for ITO transparent conductive film
JPS5492274A (en) Thermal head
Muralidhar et al. Study of discharge characteristics in pure argon and oxygen during dc sputtering of YBaCuO films