JPS57113626A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS57113626A JPS57113626A JP56000586A JP58681A JPS57113626A JP S57113626 A JPS57113626 A JP S57113626A JP 56000586 A JP56000586 A JP 56000586A JP 58681 A JP58681 A JP 58681A JP S57113626 A JPS57113626 A JP S57113626A
- Authority
- JP
- Japan
- Prior art keywords
- threshold voltage
- most11
- most2
- internal circuit
- low level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 101001034749 Homo sapiens Putative uncharacterized protein GSN-AS1 Proteins 0.000 abstract 3
- 102100039721 Putative uncharacterized protein GSN-AS1 Human genes 0.000 abstract 3
- 230000004913 activation Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Landscapes
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE:To achieve high speed operation, by increasing the threshold voltage of an insulation gate type field effect transistor (MOST) of an input stage than that of transistors of an internal circuit in the same chip. CONSTITUTION:The channel length of an MOST11 at an input stage is made longer than that of other MOSTs to obtain higher threshold voltage than that of other MOST2 and MOST3. When an external control signal In moves from high to low level of TTL at t1, even if this low level is lower than the threshold voltage of the MOST3 of the internal circuit, since the channel length of an MOS T11 is made longer so that the low level is lower than the threshold voltage of the MOST11 at the input stage, the MOST11 is nonconductive, the potential at a node A is charged through the MOST2 at a conductive state and increases to the level of (power supply voltage - threshold voltage of MOST2). Thus, the activation of an internal circuit 10 receiving the output of the node A can be made without delay.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56000586A JPS57113626A (en) | 1981-01-06 | 1981-01-06 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56000586A JPS57113626A (en) | 1981-01-06 | 1981-01-06 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57113626A true JPS57113626A (en) | 1982-07-15 |
Family
ID=11477822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56000586A Pending JPS57113626A (en) | 1981-01-06 | 1981-01-06 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57113626A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6025322A (en) * | 1983-06-29 | 1985-02-08 | シ−メンス、アクチエンゲゼルシヤフト | Input signal level converter for MOS digital circuits |
| EP0694971A3 (en) * | 1994-07-25 | 1998-01-07 | Seiko Instruments Inc. | Semiconductor integrated circuit device and electronic apparatus in use thereof |
-
1981
- 1981-01-06 JP JP56000586A patent/JPS57113626A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6025322A (en) * | 1983-06-29 | 1985-02-08 | シ−メンス、アクチエンゲゼルシヤフト | Input signal level converter for MOS digital circuits |
| EP0694971A3 (en) * | 1994-07-25 | 1998-01-07 | Seiko Instruments Inc. | Semiconductor integrated circuit device and electronic apparatus in use thereof |
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