[go: up one dir, main page]

JPS57113248A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57113248A
JPS57113248A JP55187956A JP18795680A JPS57113248A JP S57113248 A JPS57113248 A JP S57113248A JP 55187956 A JP55187956 A JP 55187956A JP 18795680 A JP18795680 A JP 18795680A JP S57113248 A JPS57113248 A JP S57113248A
Authority
JP
Japan
Prior art keywords
layer
groove
forming
sio2
resist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55187956A
Other languages
Japanese (ja)
Inventor
Akira Abiru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187956A priority Critical patent/JPS57113248A/en
Publication of JPS57113248A publication Critical patent/JPS57113248A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the density of an integrated circuit by forming an oxidized film on the surface of a groove, forming a phosphorus-silicate-glass layer in the groove, melting and forming an insulating region, thereby forming an isolating layer as the pattern. CONSTITUTION:An SiO2 layer 12 is formed on a silicon substrate 11, an Si3N4 is formed thereon, and a resist layer is formed thereon. This resist layer is patterned, a hole is opened, and a groove is formed by etching. After the resist layer is removed, an SiO2 layer 16 is formed by a thermally oxidizing method. The groove is buried with phosphrus-silicate-glass, is once molten, and an isolation layer having no crack, cavity, air bubble is formed. An SiO2 film 18 is grown on the entire surface, and the entire surface is etched.
JP55187956A 1980-12-29 1980-12-29 Manufacture of semiconductor device Pending JPS57113248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187956A JPS57113248A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187956A JPS57113248A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57113248A true JPS57113248A (en) 1982-07-14

Family

ID=16215101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187956A Pending JPS57113248A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57113248A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955033A (en) * 1982-09-22 1984-03-29 Fujitsu Ltd Formation of interelement isolating film
JPS59106133A (en) * 1982-12-09 1984-06-19 Nec Corp Integrated circuit device
US4571819A (en) * 1984-11-01 1986-02-25 Ncr Corporation Method for forming trench isolation structures
JPS61194767A (en) * 1985-02-22 1986-08-29 Nec Corp Method for manufacturing complementary MOS semiconductor device
CN113675327A (en) * 2021-07-23 2021-11-19 无锡莱斯能特科技有限公司 A method of manufacturing a thermopile sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955033A (en) * 1982-09-22 1984-03-29 Fujitsu Ltd Formation of interelement isolating film
JPS59106133A (en) * 1982-12-09 1984-06-19 Nec Corp Integrated circuit device
US4571819A (en) * 1984-11-01 1986-02-25 Ncr Corporation Method for forming trench isolation structures
JPS61194767A (en) * 1985-02-22 1986-08-29 Nec Corp Method for manufacturing complementary MOS semiconductor device
CN113675327A (en) * 2021-07-23 2021-11-19 无锡莱斯能特科技有限公司 A method of manufacturing a thermopile sensor

Similar Documents

Publication Publication Date Title
JPS5690525A (en) Manufacture of semiconductor device
JPS6467945A (en) Wiring layer formed on buried dielectric and manufacture thereof
JPS57113248A (en) Manufacture of semiconductor device
JPS5735348A (en) Manufacturing method of semiconductor device
JPS643663A (en) Forming method for fine pattern
JPS57204144A (en) Insulating and isolating method for semiconductor integrated circuit
JPS56115547A (en) Manufacture of semiconductor device
JPS57111042A (en) Manufacture of semiconductor device
JPS57121231A (en) Manufacture of semiconductor device
JPS55165637A (en) Manufacture of semiconductor integrated circuit
JPS5694647A (en) Forming method for oxidized film
JPS57202756A (en) Manufacture of semiconductor device
JPS571243A (en) Manufacture of semiconductor device
JPS56115566A (en) Manufacture of mos semiconductor device
JPS56158446A (en) Manufacture of semiconductor integrated circuit
JPS5732653A (en) Manufacture of semiconductor device
JPS572545A (en) Manufacture of semiconductor device
JPS5643744A (en) Manufacture of semiconductor device
JPS57170548A (en) Semiconductor device and manufacture thereof
JPS6468949A (en) Manufacture of semiconductor device
JPS57176769A (en) Semiconductor device and manufacture thereof
JPS55130140A (en) Fabricating method of semiconductor device
JPS5718327A (en) Production of semiconductor device
JPS57106048A (en) Manufacture of semiconductor device
JPS56155552A (en) Manufacture of semiconductor device