JPS57111212A - Surface coating method of substrate with metallic nitride - Google Patents
Surface coating method of substrate with metallic nitrideInfo
- Publication number
- JPS57111212A JPS57111212A JP18658680A JP18658680A JPS57111212A JP S57111212 A JPS57111212 A JP S57111212A JP 18658680 A JP18658680 A JP 18658680A JP 18658680 A JP18658680 A JP 18658680A JP S57111212 A JPS57111212 A JP S57111212A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chamber
- metal
- reaction chamber
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a coating layer having improved abrasion resistance on the surface thereof, by treating a substrate, e.g. a metal or ceramic, as a cathode with a gas containing N2 and a halide of a metal selected from Group IVa in the periodic table in an electric discharging space under speaific conditions. CONSTITUTION:A metal or ceramic 8 as a substrate to be treated is placed on a cathode 9 in a reaction chamber 6, and the interior of the reaction chamber 6 is evacuated to adjust the internal pressure of the reaction chamber 6 to 1X10<-3> Torr. The internal temperature of the chamber 6 is increased to 500 deg.C by a heater 7. Ar gas is then introduced into the chamber 6 to increase the internal pressure to about 1X10<-1> Torr, and a DC voltage of -800 V is applied to the cathode 9 to sputter etch the surface of the substrate 8. A gas prepared by mixing a metallic halide, e.g. TiCl4, of a metal selected from Group IVa in the periodic table with H2, N2 and Ar at a ratio of 1:(30-100):(5-50):(30-200) is introduced into the reaction chamber 6, and the internal temperature of the chamber 6 is increased to 300-600 deg.C. A voltage of 300-600 V is applied to the substrate 8 to carry out the electric discharging treatment thereof. Thus, a nitride layer of the metal having improved abrasion resistance is formed on the surface of the substrate 8.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18658680A JPS57111212A (en) | 1980-12-26 | 1980-12-26 | Surface coating method of substrate with metallic nitride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18658680A JPS57111212A (en) | 1980-12-26 | 1980-12-26 | Surface coating method of substrate with metallic nitride |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57111212A true JPS57111212A (en) | 1982-07-10 |
Family
ID=16191133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18658680A Pending JPS57111212A (en) | 1980-12-26 | 1980-12-26 | Surface coating method of substrate with metallic nitride |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57111212A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206062A (en) * | 1991-09-05 | 1993-08-13 | Micron Technol Inc | Method for improved low-pressure chemical vapor deposition for deposition of titanium nitride thin film provided with stable and low electric conductivity |
-
1980
- 1980-12-26 JP JP18658680A patent/JPS57111212A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206062A (en) * | 1991-09-05 | 1993-08-13 | Micron Technol Inc | Method for improved low-pressure chemical vapor deposition for deposition of titanium nitride thin film provided with stable and low electric conductivity |
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