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JPS57111212A - Surface coating method of substrate with metallic nitride - Google Patents

Surface coating method of substrate with metallic nitride

Info

Publication number
JPS57111212A
JPS57111212A JP18658680A JP18658680A JPS57111212A JP S57111212 A JPS57111212 A JP S57111212A JP 18658680 A JP18658680 A JP 18658680A JP 18658680 A JP18658680 A JP 18658680A JP S57111212 A JPS57111212 A JP S57111212A
Authority
JP
Japan
Prior art keywords
substrate
chamber
metal
reaction chamber
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18658680A
Other languages
Japanese (ja)
Inventor
Noribumi Kikuchi
Yuzo Osawa
Takayuki Shingyouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP18658680A priority Critical patent/JPS57111212A/en
Publication of JPS57111212A publication Critical patent/JPS57111212A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a coating layer having improved abrasion resistance on the surface thereof, by treating a substrate, e.g. a metal or ceramic, as a cathode with a gas containing N2 and a halide of a metal selected from Group IVa in the periodic table in an electric discharging space under speaific conditions. CONSTITUTION:A metal or ceramic 8 as a substrate to be treated is placed on a cathode 9 in a reaction chamber 6, and the interior of the reaction chamber 6 is evacuated to adjust the internal pressure of the reaction chamber 6 to 1X10<-3> Torr. The internal temperature of the chamber 6 is increased to 500 deg.C by a heater 7. Ar gas is then introduced into the chamber 6 to increase the internal pressure to about 1X10<-1> Torr, and a DC voltage of -800 V is applied to the cathode 9 to sputter etch the surface of the substrate 8. A gas prepared by mixing a metallic halide, e.g. TiCl4, of a metal selected from Group IVa in the periodic table with H2, N2 and Ar at a ratio of 1:(30-100):(5-50):(30-200) is introduced into the reaction chamber 6, and the internal temperature of the chamber 6 is increased to 300-600 deg.C. A voltage of 300-600 V is applied to the substrate 8 to carry out the electric discharging treatment thereof. Thus, a nitride layer of the metal having improved abrasion resistance is formed on the surface of the substrate 8.
JP18658680A 1980-12-26 1980-12-26 Surface coating method of substrate with metallic nitride Pending JPS57111212A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18658680A JPS57111212A (en) 1980-12-26 1980-12-26 Surface coating method of substrate with metallic nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18658680A JPS57111212A (en) 1980-12-26 1980-12-26 Surface coating method of substrate with metallic nitride

Publications (1)

Publication Number Publication Date
JPS57111212A true JPS57111212A (en) 1982-07-10

Family

ID=16191133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18658680A Pending JPS57111212A (en) 1980-12-26 1980-12-26 Surface coating method of substrate with metallic nitride

Country Status (1)

Country Link
JP (1) JPS57111212A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206062A (en) * 1991-09-05 1993-08-13 Micron Technol Inc Method for improved low-pressure chemical vapor deposition for deposition of titanium nitride thin film provided with stable and low electric conductivity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206062A (en) * 1991-09-05 1993-08-13 Micron Technol Inc Method for improved low-pressure chemical vapor deposition for deposition of titanium nitride thin film provided with stable and low electric conductivity

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