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JPS57107063A - Semiconductor package - Google Patents

Semiconductor package

Info

Publication number
JPS57107063A
JPS57107063A JP18457180A JP18457180A JPS57107063A JP S57107063 A JPS57107063 A JP S57107063A JP 18457180 A JP18457180 A JP 18457180A JP 18457180 A JP18457180 A JP 18457180A JP S57107063 A JPS57107063 A JP S57107063A
Authority
JP
Japan
Prior art keywords
chip
radiation
hole
fin
metallized base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18457180A
Other languages
Japanese (ja)
Inventor
Fumitaka Chiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP18457180A priority Critical patent/JPS57107063A/en
Publication of JPS57107063A publication Critical patent/JPS57107063A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To improve radiation efficiency of a package mounted with a larger chip by insertion of part of a fin into a through-hole reaching the back of a chip from the side of the substrate in the package on which the IC chip is mounted. CONSTITUTION:The IC chip 34 is bonded with a metallized base 38 interlaid. For example, at least one through-hole is cut into a chip mounting area on the ceramic substrate 30 through the metallized base 38 to reach the back of the chip. On the opposite side of the chip, the radiation fin 37 with a projecting member which is to closely contact the back of the chip by press-fit into the through-hole is provided on the substrate 30 for radiation of heat generated. This setup permits efficient radiation of heat generated from the chip. In case the fin is provided in contact with the back of the metallized base with no through-hole described above cut into the metallized base, moisture resistivity can further be improved but the radiation efficiency can be more or less reduced.
JP18457180A 1980-12-25 1980-12-25 Semiconductor package Pending JPS57107063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18457180A JPS57107063A (en) 1980-12-25 1980-12-25 Semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18457180A JPS57107063A (en) 1980-12-25 1980-12-25 Semiconductor package

Publications (1)

Publication Number Publication Date
JPS57107063A true JPS57107063A (en) 1982-07-03

Family

ID=16155529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18457180A Pending JPS57107063A (en) 1980-12-25 1980-12-25 Semiconductor package

Country Status (1)

Country Link
JP (1) JPS57107063A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593554U (en) * 1982-06-30 1984-01-11 富士通株式会社 semiconductor equipment
JPS5991742U (en) * 1982-12-13 1984-06-21 鳴海製陶株式会社 Package for semiconductors
JPS62128535A (en) * 1985-11-29 1987-06-10 Fujitsu Ltd semiconductor equipment
US4835598A (en) * 1985-06-13 1989-05-30 Matsushita Electric Works, Ltd. Wiring board
US4907067A (en) * 1988-05-11 1990-03-06 Texas Instruments Incorporated Thermally efficient power device package
US5216283A (en) * 1990-05-03 1993-06-01 Motorola, Inc. Semiconductor device having an insertable heat sink and method for mounting the same
EP0566872A3 (en) * 1992-04-21 1994-05-11 Motorola Inc A thermally enhanced semiconductor device and method for making the same
EP0582705A4 (en) * 1992-03-02 1995-02-22 Motorola Inc RING ENVELOPED SEMICONDUCTOR PACK.
KR100352119B1 (en) * 1996-12-13 2002-12-31 앰코 테크놀로지 코리아 주식회사 Structure of ball grid array semiconductor package having heatsink and fabricating method thereof
EP3157051A3 (en) * 2015-09-23 2017-07-05 NXP USA, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
US9871107B2 (en) 2015-05-22 2018-01-16 Nxp Usa, Inc. Device with a conductive feature formed over a cavity and method therefor
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4824356B1 (en) * 1969-06-18 1973-07-20
JPS4897056A (en) * 1972-03-25 1973-12-11
JPS5389664A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Package structure of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4824356B1 (en) * 1969-06-18 1973-07-20
JPS4897056A (en) * 1972-03-25 1973-12-11
JPS5389664A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Package structure of semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593554U (en) * 1982-06-30 1984-01-11 富士通株式会社 semiconductor equipment
JPS5991742U (en) * 1982-12-13 1984-06-21 鳴海製陶株式会社 Package for semiconductors
US4835598A (en) * 1985-06-13 1989-05-30 Matsushita Electric Works, Ltd. Wiring board
JPS62128535A (en) * 1985-11-29 1987-06-10 Fujitsu Ltd semiconductor equipment
US4907067A (en) * 1988-05-11 1990-03-06 Texas Instruments Incorporated Thermally efficient power device package
US5216283A (en) * 1990-05-03 1993-06-01 Motorola, Inc. Semiconductor device having an insertable heat sink and method for mounting the same
EP0582705A4 (en) * 1992-03-02 1995-02-22 Motorola Inc RING ENVELOPED SEMICONDUCTOR PACK.
US5483098A (en) * 1992-04-21 1996-01-09 Motorola, Inc. Drop-in heat sink package with window frame flag
EP0566872A3 (en) * 1992-04-21 1994-05-11 Motorola Inc A thermally enhanced semiconductor device and method for making the same
KR100352119B1 (en) * 1996-12-13 2002-12-31 앰코 테크놀로지 코리아 주식회사 Structure of ball grid array semiconductor package having heatsink and fabricating method thereof
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof
US9871107B2 (en) 2015-05-22 2018-01-16 Nxp Usa, Inc. Device with a conductive feature formed over a cavity and method therefor
EP3157051A3 (en) * 2015-09-23 2017-07-05 NXP USA, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
CN106941083A (en) * 2015-09-23 2017-07-11 飞思卡尔半导体公司 The encapsulation of encapsulating semiconductor device and its manufacture method with fin openings
US9787254B2 (en) 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
CN106941083B (en) * 2015-09-23 2021-08-06 恩智浦美国有限公司 Encapsulated semiconductor device package with heat sink opening and method of making same

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