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JPS57102023A - Method of forming metallized dielectric structure - Google Patents

Method of forming metallized dielectric structure

Info

Publication number
JPS57102023A
JPS57102023A JP56171941A JP17194181A JPS57102023A JP S57102023 A JPS57102023 A JP S57102023A JP 56171941 A JP56171941 A JP 56171941A JP 17194181 A JP17194181 A JP 17194181A JP S57102023 A JPS57102023 A JP S57102023A
Authority
JP
Japan
Prior art keywords
dielectric structure
metallized dielectric
forming metallized
forming
metallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56171941A
Other languages
English (en)
Japanese (ja)
Inventor
Nikorasu Epifuaano Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS57102023A publication Critical patent/JPS57102023A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP56171941A 1980-10-29 1981-10-26 Method of forming metallized dielectric structure Pending JPS57102023A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20176780A 1980-10-29 1980-10-29

Publications (1)

Publication Number Publication Date
JPS57102023A true JPS57102023A (en) 1982-06-24

Family

ID=22747208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56171941A Pending JPS57102023A (en) 1980-10-29 1981-10-26 Method of forming metallized dielectric structure

Country Status (4)

Country Link
JP (1) JPS57102023A (it)
DE (1) DE3141680A1 (it)
IT (1) IT1153991B (it)
SE (1) SE8105918L (it)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925246A (ja) * 1982-08-02 1984-02-09 Nec Corp 半導体装置の製造方法
JPS62188246A (ja) * 1986-02-13 1987-08-17 Nec Corp 半導体装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3231457A1 (de) * 1982-08-24 1984-03-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen von strukturen fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen
DE3234907A1 (de) * 1982-09-21 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer monolithisch integrierten schaltung
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
DE3328339A1 (de) * 1983-08-05 1985-02-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur metallisierung einer kunststoffoberflaeche
DE3429082A1 (de) * 1984-08-07 1986-02-27 Siemens AG, 1000 Berlin und 8000 München Steuerscheibe fuer gasentladungsanzeige
DE3615519A1 (de) * 1986-05-07 1987-11-12 Siemens Ag Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten
DE69219998T2 (de) * 1991-10-31 1997-12-18 Sgs Thomson Microelectronics Verfahren zur Entfernung von Polymeren aus Sacklöchern in Halbleitervorrichtungen
DE4311807C2 (de) * 1993-04-03 1998-03-19 Atotech Deutschland Gmbh Verfahren zur Beschichtung von Metallen und Anwendung des Verfahrens in der Leiterplattentechnik
US5597983A (en) * 1994-02-03 1997-01-28 Sgs-Thomson Microelectronics, Inc. Process of removing polymers in semiconductor vias
US20040209190A1 (en) * 2000-12-22 2004-10-21 Yoshiaki Mori Pattern forming method and apparatus used for semiconductor device, electric circuit, display module, and light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925246A (ja) * 1982-08-02 1984-02-09 Nec Corp 半導体装置の製造方法
JPS62188246A (ja) * 1986-02-13 1987-08-17 Nec Corp 半導体装置

Also Published As

Publication number Publication date
DE3141680A1 (de) 1982-06-16
IT8124331A0 (it) 1981-10-05
IT1153991B (it) 1987-01-21
SE8105918L (sv) 1982-04-30

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