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JPS5694749A - Plasma heaping device - Google Patents

Plasma heaping device

Info

Publication number
JPS5694749A
JPS5694749A JP17117679A JP17117679A JPS5694749A JP S5694749 A JPS5694749 A JP S5694749A JP 17117679 A JP17117679 A JP 17117679A JP 17117679 A JP17117679 A JP 17117679A JP S5694749 A JPS5694749 A JP S5694749A
Authority
JP
Japan
Prior art keywords
gas
container
plasma
supplying
heaping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17117679A
Other languages
Japanese (ja)
Inventor
Itaru Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP17117679A priority Critical patent/JPS5694749A/en
Publication of JPS5694749A publication Critical patent/JPS5694749A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To heap a film of an excellent uniformity by a method wherein a gas supplying device composed of two or more supplying blocks connected to a gas system which can independently control a flow rate is installed in a vacuum gas exhaust enable container of a plasma heaping device. CONSTITUTION:A gas exhaust pump 9 is connected to a container 3 of a plasma heaping device and in this container, a supporting body 2 having a semiconductor substrate 1 on it is installed and further, as a gas supplier, gas supplying units 4A, 4B connected to cylinders 11, 12 through flow rate setting devices 7A, 8A, 7B, 8B are installed in the container 3. For example, by changing the flow-rate of SiH4 against NH3 in the supplying units 4A and 4B, the uniformity of a film to be formed in a lot can be improved.
JP17117679A 1979-12-28 1979-12-28 Plasma heaping device Pending JPS5694749A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17117679A JPS5694749A (en) 1979-12-28 1979-12-28 Plasma heaping device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17117679A JPS5694749A (en) 1979-12-28 1979-12-28 Plasma heaping device

Publications (1)

Publication Number Publication Date
JPS5694749A true JPS5694749A (en) 1981-07-31

Family

ID=15918400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17117679A Pending JPS5694749A (en) 1979-12-28 1979-12-28 Plasma heaping device

Country Status (1)

Country Link
JP (1) JPS5694749A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58194343A (en) * 1982-05-10 1983-11-12 Toshiba Corp Preparation of semiconductor device
FR2557824A1 (en) * 1983-11-14 1985-07-12 Gca Corp GAS SUPPLY DEVICE FOR REAGENT ION ETCHING APPARATUS
FR2584098A1 (en) * 1985-06-27 1987-01-02 Air Liquide Process for depositing a silicon coating on a metal article
FR2613535A1 (en) * 1987-03-18 1988-10-07 Teijin Ltd REACTOR FOR LAYING A LAYER ON A MOBILE SUBSTRATE FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE
EP0437110A2 (en) * 1990-01-08 1991-07-17 Lsi Logic Corporation Tungsten deposition process for low contact resistivity to silicon
JP2013159798A (en) * 2012-02-02 2013-08-19 Mitsubishi Electric Corp Plasma cvd device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58194343A (en) * 1982-05-10 1983-11-12 Toshiba Corp Preparation of semiconductor device
JPH0414499B2 (en) * 1982-05-10 1992-03-13 Tokyo Shibaura Electric Co
FR2557824A1 (en) * 1983-11-14 1985-07-12 Gca Corp GAS SUPPLY DEVICE FOR REAGENT ION ETCHING APPARATUS
FR2584098A1 (en) * 1985-06-27 1987-01-02 Air Liquide Process for depositing a silicon coating on a metal article
FR2613535A1 (en) * 1987-03-18 1988-10-07 Teijin Ltd REACTOR FOR LAYING A LAYER ON A MOBILE SUBSTRATE FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE
EP0437110A2 (en) * 1990-01-08 1991-07-17 Lsi Logic Corporation Tungsten deposition process for low contact resistivity to silicon
JP2013159798A (en) * 2012-02-02 2013-08-19 Mitsubishi Electric Corp Plasma cvd device

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