[go: up one dir, main page]

JPS5690568A - Semiconductor device for photoelectric transducer - Google Patents

Semiconductor device for photoelectric transducer

Info

Publication number
JPS5690568A
JPS5690568A JP16669379A JP16669379A JPS5690568A JP S5690568 A JPS5690568 A JP S5690568A JP 16669379 A JP16669379 A JP 16669379A JP 16669379 A JP16669379 A JP 16669379A JP S5690568 A JPS5690568 A JP S5690568A
Authority
JP
Japan
Prior art keywords
lens
wafer
photoelectric transducer
image
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16669379A
Other languages
Japanese (ja)
Inventor
Kenji Nakauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP16669379A priority Critical patent/JPS5690568A/en
Publication of JPS5690568A publication Critical patent/JPS5690568A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To provide a low cost photoelectric transducer device by a method wherein a lens for making an image at a photoelectric transducer part is integrally molded by a transparent resin when a wafer is molded. CONSTITUTION:P type layer 2 is made at N type Si wafer 1, and the desired circuits 3 are placed at the right and left sides of the layer 2. After the photodiode parts are connected to the circuits 3, a front surface of the wafer 1 is selectively covered by SiO2 film 4, a light shield mask 5 is applied to restrict a light receiving surface and thereby the circuits 3 are shielded against the light. The image is made at the input/output pin 6 under the mask 5 and SiO2 film 4. Then, when the device is molded by a transparent epoxy resin 7, the lens 8 is integrally molded and the image is made on the photodiode. The part of the top surface of the resin 7 other than the lens 8 is covered by the light shield layer 9. The arrangement is simple in its construction and no lens fixing operation is required, no displacement of the lens is found to reduce a cost for the device.
JP16669379A 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer Pending JPS5690568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16669379A JPS5690568A (en) 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16669379A JPS5690568A (en) 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer

Publications (1)

Publication Number Publication Date
JPS5690568A true JPS5690568A (en) 1981-07-22

Family

ID=15835981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16669379A Pending JPS5690568A (en) 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS5690568A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01176954U (en) * 1988-06-01 1989-12-18
US4920075A (en) * 1982-06-15 1990-04-24 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device having a lens section
JP2002141518A (en) * 2000-10-30 2002-05-17 Seiko Instruments Inc Structure and manufacturing method of semiconductor module
JP2002246613A (en) * 2001-02-14 2002-08-30 Seiko Instruments Inc Optical function module and its manufacturing method
US7157302B2 (en) 1998-06-04 2007-01-02 Micron Technology, Inc. Imaging device and method of manufacture
JP2011009408A (en) * 2009-06-25 2011-01-13 Ricoh Co Ltd Electronic component module and manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5256776U (en) * 1975-10-23 1977-04-23
JPS534772U (en) * 1976-06-30 1978-01-17

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5256776U (en) * 1975-10-23 1977-04-23
JPS534772U (en) * 1976-06-30 1978-01-17

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920075A (en) * 1982-06-15 1990-04-24 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device having a lens section
JPH01176954U (en) * 1988-06-01 1989-12-18
US7157302B2 (en) 1998-06-04 2007-01-02 Micron Technology, Inc. Imaging device and method of manufacture
JP2002141518A (en) * 2000-10-30 2002-05-17 Seiko Instruments Inc Structure and manufacturing method of semiconductor module
JP2002246613A (en) * 2001-02-14 2002-08-30 Seiko Instruments Inc Optical function module and its manufacturing method
JP2011009408A (en) * 2009-06-25 2011-01-13 Ricoh Co Ltd Electronic component module and manufacturing method

Similar Documents

Publication Publication Date Title
JPS53113527A (en) Camera for definite multiplication image in the variable multiplicaton lens system
JPS5396720A (en) Solid image pickup element
JPS5690568A (en) Semiconductor device for photoelectric transducer
JPS52140333A (en) Optical device
JPS53112061A (en) Wiring substrate of semiconductor chip
JPS5617078A (en) Semiconductor device containing photosensor
JPS5242390A (en) Semiconductor light receiving device
JPS5585082A (en) Optical semiconductor apparatus
JPS5670553A (en) Photomask for projection exposure
JPS5498188A (en) Photocuopler
JPS56126723A (en) Photoelectric transducing device for illuminometer
JPS5791568A (en) Light module
JPS5745270A (en) Semiconductor device
JPS54974A (en) Manufacture for semiconductor device
JPS548523A (en) Exposure controller of cameras
JPS5347853A (en) Jointed lens
JPS53114693A (en) Moulding method for semiconductor photo detecting device
JPS5325432A (en) L ight measure circuit for camera
JPS5748164A (en) Method and device for preparation of editing pattern figure
JPS5556672A (en) Light-coupled semiconductor device
JPS56103482A (en) Manufacture of semiconductor device for photoelectric conversion
JPS5380227A (en) Photographic attachment lens
JPS5328387A (en) Photo coupled integrated circuit element
EP0136534A3 (en) Method of forming a large surface area integrated circuit
JPS5618472A (en) Solid-state image pickup device