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JPS5688376A - Schottky barrier diode with p-n junction - Google Patents

Schottky barrier diode with p-n junction

Info

Publication number
JPS5688376A
JPS5688376A JP16621979A JP16621979A JPS5688376A JP S5688376 A JPS5688376 A JP S5688376A JP 16621979 A JP16621979 A JP 16621979A JP 16621979 A JP16621979 A JP 16621979A JP S5688376 A JPS5688376 A JP S5688376A
Authority
JP
Japan
Prior art keywords
layer
region
type
schottky barrier
covered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16621979A
Other languages
English (en)
Other versions
JPS6031112B2 (ja
Inventor
Yuki Shimada
Kenji Hideshima
Katsunori Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
Shindengen Electric Manufacturing Co Ltd
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd, NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP54166219A priority Critical patent/JPS6031112B2/ja
Publication of JPS5688376A publication Critical patent/JPS5688376A/ja
Publication of JPS6031112B2 publication Critical patent/JPS6031112B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP54166219A 1979-12-20 1979-12-20 Ｐｎ接合を有するシヨツトキダイオ−ド Expired JPS6031112B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54166219A JPS6031112B2 (ja) 1979-12-20 1979-12-20 Ｐｎ接合を有するシヨツトキダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54166219A JPS6031112B2 (ja) 1979-12-20 1979-12-20 Ｐｎ接合を有するシヨツトキダイオ−ド

Publications (2)

Publication Number Publication Date
JPS5688376A true JPS5688376A (en) 1981-07-17
JPS6031112B2 JPS6031112B2 (ja) 1985-07-20

Family

ID=15827311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54166219A Expired JPS6031112B2 (ja) 1979-12-20 1979-12-20 Ｐｎ接合を有するシヨツトキダイオ−ド

Country Status (1)

Country Link
JP (1) JPS6031112B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137368A (ja) * 1988-11-18 1990-05-25 Toshiba Corp 半導体整流装置
JPH03185871A (ja) * 1989-12-15 1991-08-13 Toshiba Corp ショットキー・ダイオード
JP2010045158A (ja) * 2008-08-12 2010-02-25 Shindengen Electric Mfg Co Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137368A (ja) * 1988-11-18 1990-05-25 Toshiba Corp 半導体整流装置
JPH03185871A (ja) * 1989-12-15 1991-08-13 Toshiba Corp ショットキー・ダイオード
JP2010045158A (ja) * 2008-08-12 2010-02-25 Shindengen Electric Mfg Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPS6031112B2 (ja) 1985-07-20

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