JPS55127066A - Manufacture of reverse-conductive thyristor - Google Patents
Manufacture of reverse-conductive thyristorInfo
- Publication number
- JPS55127066A JPS55127066A JP3471279A JP3471279A JPS55127066A JP S55127066 A JPS55127066 A JP S55127066A JP 3471279 A JP3471279 A JP 3471279A JP 3471279 A JP3471279 A JP 3471279A JP S55127066 A JPS55127066 A JP S55127066A
- Authority
- JP
- Japan
- Prior art keywords
- domain
- substrate
- diffused
- annular
- reverse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE:To minimize both current expansion loss and reverse recovery loss by a method wherein a diode part and an annular thyristor part surrounding it are provided on the surface of a semiconductor substrate, a cathode domain is also provided on the back, and gold is diffused in the substrate with the circumference of both front and back ends masked by an annular insulating film. CONSTITUTION:A p-type gate layer PB is diffused and formed on an n-type semiconductor substrate NB to work as anode layer, an annular n-type gate domain NB is provided therein, and the center of the layer PB is connected to a diode part 8 through an isolated zone 10 and the domain NE to a thyristor part 12 each electrically in reverse parallel. Then, an annular p-type cathode domain PE is also diffused and formed on the back of the substrate NB, and a reverse-conductive thyristor is constituted thereby. After that, insulating films 14 and 16 with which the surface domain NE is all covered and the back domain PE is covered about half outside are provided, gold is diffused in the substrate NB with the insulating films as mask, and a life time killer having a given distribution is formed in the substrate NB.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54034712A JPS6043033B2 (en) | 1979-03-23 | 1979-03-23 | Manufacturing method of reverse conduction thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54034712A JPS6043033B2 (en) | 1979-03-23 | 1979-03-23 | Manufacturing method of reverse conduction thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55127066A true JPS55127066A (en) | 1980-10-01 |
| JPS6043033B2 JPS6043033B2 (en) | 1985-09-26 |
Family
ID=12421946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54034712A Expired JPS6043033B2 (en) | 1979-03-23 | 1979-03-23 | Manufacturing method of reverse conduction thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043033B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62145868A (en) * | 1985-12-20 | 1987-06-29 | Meidensha Electric Mfg Co Ltd | Reverse conducting gate turn-off thyristor |
| EP0685889A3 (en) * | 1994-06-02 | 1996-04-03 | Fuji Electric Co Ltd | Thyristor GTO with reverse conduction and its manufacturing method. |
-
1979
- 1979-03-23 JP JP54034712A patent/JPS6043033B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62145868A (en) * | 1985-12-20 | 1987-06-29 | Meidensha Electric Mfg Co Ltd | Reverse conducting gate turn-off thyristor |
| EP0685889A3 (en) * | 1994-06-02 | 1996-04-03 | Fuji Electric Co Ltd | Thyristor GTO with reverse conduction and its manufacturing method. |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6043033B2 (en) | 1985-09-26 |
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