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JPS568501B2 - - Google Patents

Info

Publication number
JPS568501B2
JPS568501B2 JP5290673A JP5290673A JPS568501B2 JP S568501 B2 JPS568501 B2 JP S568501B2 JP 5290673 A JP5290673 A JP 5290673A JP 5290673 A JP5290673 A JP 5290673A JP S568501 B2 JPS568501 B2 JP S568501B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5290673A
Other languages
Japanese (ja)
Other versions
JPS503579A (it
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5290673A priority Critical patent/JPS568501B2/ja
Priority to IT22570/74A priority patent/IT1012257B/it
Priority to FR7416453A priority patent/FR2229141B3/fr
Priority to NL7406423A priority patent/NL7406423A/xx
Priority to DE2423114A priority patent/DE2423114A1/de
Publication of JPS503579A publication Critical patent/JPS503579A/ja
Publication of JPS568501B2 publication Critical patent/JPS568501B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP5290673A 1973-05-12 1973-05-12 Expired JPS568501B2 (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP5290673A JPS568501B2 (it) 1973-05-12 1973-05-12
IT22570/74A IT1012257B (it) 1973-05-12 1974-05-10 Dispositivo semiconduttore
FR7416453A FR2229141B3 (it) 1973-05-12 1974-05-13
NL7406423A NL7406423A (it) 1973-05-12 1974-05-13
DE2423114A DE2423114A1 (de) 1973-05-12 1974-05-13 Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5290673A JPS568501B2 (it) 1973-05-12 1973-05-12

Publications (2)

Publication Number Publication Date
JPS503579A JPS503579A (it) 1975-01-14
JPS568501B2 true JPS568501B2 (it) 1981-02-24

Family

ID=12927870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5290673A Expired JPS568501B2 (it) 1973-05-12 1973-05-12

Country Status (5)

Country Link
JP (1) JPS568501B2 (it)
DE (1) DE2423114A1 (it)
FR (1) FR2229141B3 (it)
IT (1) IT1012257B (it)
NL (1) NL7406423A (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125663A (en) * 1979-03-22 1980-09-27 Hitachi Ltd Semiconductor integrated circuit
DE2929869C2 (de) * 1979-07-24 1986-04-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte CMOS-Inverterschaltungsanordnung
US4253105A (en) * 1980-07-03 1981-02-24 Rca Corporation Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device
JPH0714023B2 (ja) * 1986-09-29 1995-02-15 松下電子工業株式会社 半導体装置
CN105957886B (zh) * 2016-06-28 2019-05-14 中国科学院微电子研究所 一种碳化硅双极结型晶体管

Also Published As

Publication number Publication date
FR2229141B3 (it) 1977-03-11
DE2423114A1 (de) 1974-11-28
NL7406423A (it) 1974-11-14
FR2229141A1 (it) 1974-12-06
JPS503579A (it) 1975-01-14
IT1012257B (it) 1977-03-10

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