JPS5683981A - Semiconductor device and manufacture - Google Patents
Semiconductor device and manufactureInfo
- Publication number
- JPS5683981A JPS5683981A JP16247279A JP16247279A JPS5683981A JP S5683981 A JPS5683981 A JP S5683981A JP 16247279 A JP16247279 A JP 16247279A JP 16247279 A JP16247279 A JP 16247279A JP S5683981 A JPS5683981 A JP S5683981A
- Authority
- JP
- Japan
- Prior art keywords
- defective part
- substrate
- oxidized
- leak
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000002950 deficient Effects 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 239000003792 electrolyte Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To prevent a leak from being caused by a defect of a diffusion region by a method wherein a defective part is made an insulator by a means of oxidation or the like. CONSTITUTION:An Si substrate 23 is placed in a vessel 15 and the part of the vessel on the surface side thereof is filled with an electrolyte 31 and the same on the reverse side with HF liquid 32. Electrodes 33, 34 are installed in the electrolytes 31, 32 to apply a positive electricity to the electrode 33 and a negative one to the electrode 34. In such a condition, P-N junction on the substrate 23 is put in a reverse bias state, so that no other current than a dark current flows to a normal P-N junction. However, a leak current flows to the defective part 27. Accordingly, a current passage 31 is formed, and the substrate 23 is gradually made porous from the reverse side thereof toward the defective part 27. Then, the substrate 23 would be oxidized along the porous layer, if it be placed in an oxidized atmosphere. Accordingly, the defective part is oxidized so that the leak current will not flow. Thus, the defective part 27 is oxidized and the leak can be arrested.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16247279A JPS5683981A (en) | 1979-12-13 | 1979-12-13 | Semiconductor device and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16247279A JPS5683981A (en) | 1979-12-13 | 1979-12-13 | Semiconductor device and manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5683981A true JPS5683981A (en) | 1981-07-08 |
Family
ID=15755268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16247279A Pending JPS5683981A (en) | 1979-12-13 | 1979-12-13 | Semiconductor device and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5683981A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2508708A1 (en) * | 1981-06-26 | 1982-12-31 | Rca Corp | ELECTROLYTIC PROCESS FOR ELIMINATING SHORT CIRCUITS AND SHUNTS IN SOLAR CELLS |
| EP0134364A2 (en) * | 1983-08-03 | 1985-03-20 | Energy Conversion Devices, Inc. | System and method for eliminating short and latent short circuit current paths in photovoltaic devices |
| US6228662B1 (en) | 1999-03-24 | 2001-05-08 | Kaneka Corporation | Method for removing short-circuited sections of a solar cell |
-
1979
- 1979-12-13 JP JP16247279A patent/JPS5683981A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2508708A1 (en) * | 1981-06-26 | 1982-12-31 | Rca Corp | ELECTROLYTIC PROCESS FOR ELIMINATING SHORT CIRCUITS AND SHUNTS IN SOLAR CELLS |
| EP0134364A2 (en) * | 1983-08-03 | 1985-03-20 | Energy Conversion Devices, Inc. | System and method for eliminating short and latent short circuit current paths in photovoltaic devices |
| EP0134364A3 (en) * | 1983-08-03 | 1986-06-04 | Energy Conversion Devices, Inc. | System and method for eliminating short and latent short circuit current paths in photovoltaic devices |
| US6228662B1 (en) | 1999-03-24 | 2001-05-08 | Kaneka Corporation | Method for removing short-circuited sections of a solar cell |
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