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JPS5671965A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5671965A
JPS5671965A JP14982979A JP14982979A JPS5671965A JP S5671965 A JPS5671965 A JP S5671965A JP 14982979 A JP14982979 A JP 14982979A JP 14982979 A JP14982979 A JP 14982979A JP S5671965 A JPS5671965 A JP S5671965A
Authority
JP
Japan
Prior art keywords
fet
gate
resistance
increased
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14982979A
Other languages
Japanese (ja)
Inventor
Kazunari Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14982979A priority Critical patent/JPS5671965A/en
Publication of JPS5671965A publication Critical patent/JPS5671965A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To change resistance by controlling threshold voltage with an FET connected in parallel. CONSTITUTION:Voltage is directly applied to a specified FET control gate from outside with the MISFETT1... of a floating gate connected in parallel to change the threshold value thereof. In operation, total resistance is adjusted by substantially turning off the FET. A variable resistor can be obtained using one FET by reducing the charge leak of the gate with the interval between the gate on one hand and a substrate and a control gate on the other increased and can be increased in resistance width by making this semiconductor device into a depletion type. Thereby, a variable resistor device kept stable for a long time can be obtained.
JP14982979A 1979-11-19 1979-11-19 Semiconductor device Pending JPS5671965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14982979A JPS5671965A (en) 1979-11-19 1979-11-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14982979A JPS5671965A (en) 1979-11-19 1979-11-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5671965A true JPS5671965A (en) 1981-06-15

Family

ID=15483579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14982979A Pending JPS5671965A (en) 1979-11-19 1979-11-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5671965A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202706A (en) * 1983-04-30 1984-11-16 Sanken Electric Co Ltd Method and device for converting direct current to optional voltage waveform
EP0634750A2 (en) * 1993-07-12 1995-01-18 Kabushiki Kaisha Toshiba Apparatus and method for reading multi-level data stored in a semiconductor memory
JP2007235120A (en) * 2006-02-03 2007-09-13 Denso Corp Semiconductor device
DE102007012469A1 (en) * 2007-02-01 2008-08-14 Denso Corp., Kariya Semiconductor device with variable operating information

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202706A (en) * 1983-04-30 1984-11-16 Sanken Electric Co Ltd Method and device for converting direct current to optional voltage waveform
JPH0465564B2 (en) * 1983-04-30 1992-10-20 Sanken Electric Co Ltd
EP0634750A2 (en) * 1993-07-12 1995-01-18 Kabushiki Kaisha Toshiba Apparatus and method for reading multi-level data stored in a semiconductor memory
EP0634750A3 (en) * 1993-07-12 1996-01-10 Toshiba Kk Apparatus and method for reading multi-level data stored in a semiconductor memory.
US5852575A (en) * 1993-07-12 1998-12-22 Kabushiki Kaisha Toshiba Apparatus and method for reading multi-level data stored in a semiconductor memory
JP2007235120A (en) * 2006-02-03 2007-09-13 Denso Corp Semiconductor device
DE102007012469A1 (en) * 2007-02-01 2008-08-14 Denso Corp., Kariya Semiconductor device with variable operating information
DE102007012469B4 (en) * 2007-02-01 2011-12-08 Denso Corporation Semiconductor device with variable operating information

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