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JPS5670482A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPS5670482A
JPS5670482A JP14677379A JP14677379A JPS5670482A JP S5670482 A JPS5670482 A JP S5670482A JP 14677379 A JP14677379 A JP 14677379A JP 14677379 A JP14677379 A JP 14677379A JP S5670482 A JPS5670482 A JP S5670482A
Authority
JP
Japan
Prior art keywords
detecting
elements
units
radiation
detecting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14677379A
Other languages
Japanese (ja)
Inventor
Yujiro Naruse
Toru Sugita
Tetsuji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14677379A priority Critical patent/JPS5670482A/en
Publication of JPS5670482A publication Critical patent/JPS5670482A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measurement Of Radiation (AREA)
  • X-Ray Techniques (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

PURPOSE: To enable highly precise detection of the two-dimentional distribution of radiation by arranging a plurality of detecting units prepared by mounting a plurality of semiconductor radiation detecting elemenets in such a manner that the units are laid on the other so as for the detecting element areas not to overlap.
CONSTITUTION: The radiation detecting elements 41 mounted monolithically on a mounting bed are fitted in the holes provided in a fixing board 2 and fixed and electrode lead-out wires 431 and 432 are provided. For the mounting bed and the fixing board 42 a material whose X-ray attenuation is small is used. In addition, the elements 41 and the lead-out wires 431 and 432 are formed so that the amount of X-ray attenuation thereof is very small. Moreover, the positional relation of arrangement of the detecting elemets of the two detector units is set so that the area of one detecting element does not overlap with that of the other detecting element. By this constitution, substantial high-density fitting of the detecting elements is performed and thereby highly precise detection of the two-dimentional distribution of X rays is made possible.
COPYRIGHT: (C)1981,JPO&Japio
JP14677379A 1979-11-13 1979-11-13 Semiconductor radiation detector Pending JPS5670482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14677379A JPS5670482A (en) 1979-11-13 1979-11-13 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14677379A JPS5670482A (en) 1979-11-13 1979-11-13 Semiconductor radiation detector

Publications (1)

Publication Number Publication Date
JPS5670482A true JPS5670482A (en) 1981-06-12

Family

ID=15415213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14677379A Pending JPS5670482A (en) 1979-11-13 1979-11-13 Semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS5670482A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105087A (en) * 1990-11-28 1992-04-14 Eastman Kodak Company Large solid state sensor assembly formed from smaller sensors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105087A (en) * 1990-11-28 1992-04-14 Eastman Kodak Company Large solid state sensor assembly formed from smaller sensors

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