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JPS5667976A - Preparation method of light potentiometer element - Google Patents

Preparation method of light potentiometer element

Info

Publication number
JPS5667976A
JPS5667976A JP14404379A JP14404379A JPS5667976A JP S5667976 A JPS5667976 A JP S5667976A JP 14404379 A JP14404379 A JP 14404379A JP 14404379 A JP14404379 A JP 14404379A JP S5667976 A JPS5667976 A JP S5667976A
Authority
JP
Japan
Prior art keywords
light
pin hole
light conduction
conduction film
potentiometer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14404379A
Other languages
Japanese (ja)
Other versions
JPS6057236B2 (en
Inventor
Masuji Sato
Satoru Kawai
Takao Furuumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54144043A priority Critical patent/JPS6057236B2/en
Publication of JPS5667976A publication Critical patent/JPS5667976A/en
Publication of JPS6057236B2 publication Critical patent/JPS6057236B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H10F55/208—Optical potentiometers

Landscapes

  • Adjustable Resistors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Optical Transform (AREA)

Abstract

PURPOSE:To improve an operational efficiency in the preparation process of a light potentiometer by a method wherein a pattern shape of a light conduction films at the terminal part of a light potentiometer is regulated so as no to produce cracks by means of a coating of an electrode. CONSTITUTION:A light conduction film is installed round a pin hole 8a intermittently. In other words, in a terminal part area 8 centered around the pin hole 8a, light conduction film forming areas PF1, PF2 are adjacent to substrate surface exposing areas PN1, PN2. An electrode 5 is formed in such a way as to coat a terminal 8 wherein a light conduction film of a pattern like this is formed. And when a lead wire for connecting a power source and a potentiometer is inserted into the pin hole 8a of the terminal part 8 and is fixed with soldering, a solder in a melting state flows from the vicinity of the pin hole into a peripheral area and it fills a cracked part produced at the brim part of the light conduction film forming area PF1, PF2.
JP54144043A 1979-11-07 1979-11-07 Manufacturing method of optical potentiometer element Expired JPS6057236B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54144043A JPS6057236B2 (en) 1979-11-07 1979-11-07 Manufacturing method of optical potentiometer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54144043A JPS6057236B2 (en) 1979-11-07 1979-11-07 Manufacturing method of optical potentiometer element

Publications (2)

Publication Number Publication Date
JPS5667976A true JPS5667976A (en) 1981-06-08
JPS6057236B2 JPS6057236B2 (en) 1985-12-13

Family

ID=15352984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54144043A Expired JPS6057236B2 (en) 1979-11-07 1979-11-07 Manufacturing method of optical potentiometer element

Country Status (1)

Country Link
JP (1) JPS6057236B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114709091A (en) * 2022-04-29 2022-07-05 南通原声电子有限公司 Returning and sleeving equipment for processing electrolytic capacitor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114709091A (en) * 2022-04-29 2022-07-05 南通原声电子有限公司 Returning and sleeving equipment for processing electrolytic capacitor
CN114709091B (en) * 2022-04-29 2022-12-16 南通原声电子有限公司 Returning and sleeving equipment for processing electrolytic capacitor

Also Published As

Publication number Publication date
JPS6057236B2 (en) 1985-12-13

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