JPS5650573A - Mis tunnel diode type mosfet - Google Patents
Mis tunnel diode type mosfetInfo
- Publication number
- JPS5650573A JPS5650573A JP12641579A JP12641579A JPS5650573A JP S5650573 A JPS5650573 A JP S5650573A JP 12641579 A JP12641579 A JP 12641579A JP 12641579 A JP12641579 A JP 12641579A JP S5650573 A JPS5650573 A JP S5650573A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- oxide film
- substrate
- thickness
- tunnel diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To contrive the facilitation of an MIS tunnel diode type MOSFET by not forming a diffused region on the surface of a substrate, forming once an insulating film thereon, selectively etching a part of the film so as not to repeat the step of forming an insulating film, and thereby freely selecting an electrode forming machine. CONSTITUTION:A silicon oxide film 2 is grown on a thickness of higher than 100Angstrom on the surface of an n type silicon substrate 1. The substrate 1 is thermally oxidized at a temperature higher than 1,000 deg.C in oxygen or oxygen and steam mixture atmosphere or is formed by a plasma oxidation process. Subsequently, the oxide film is selectively photoetched at predetermined portions 21, 22 adjacent to the source and drain electrodes 31 and 32 so as to have a thickness less than 100Angstrom . However, the predetermined oxide film 20 disposed directly under the gate 4 is retained in the thickness higher than 100Angstrom . Thereafter, gold is evaporated, the electrodes 31, 32 are evaporated with aluminum, and the gate 4 is selectively formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12641579A JPS5650573A (en) | 1979-10-02 | 1979-10-02 | Mis tunnel diode type mosfet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12641579A JPS5650573A (en) | 1979-10-02 | 1979-10-02 | Mis tunnel diode type mosfet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5650573A true JPS5650573A (en) | 1981-05-07 |
Family
ID=14934593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12641579A Pending JPS5650573A (en) | 1979-10-02 | 1979-10-02 | Mis tunnel diode type mosfet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5650573A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130469A (en) * | 1981-02-05 | 1982-08-12 | Seiko Epson Corp | Mis type semiconductor device |
| JPS63127220A (en) * | 1986-11-17 | 1988-05-31 | Fuji Photo Optical Co Ltd | Electronic endoscope |
| JP2005333151A (en) * | 2005-06-13 | 2005-12-02 | Takashi Katoda | Electronic device and optical device having ultrafine structure made through use of focused ion beam |
-
1979
- 1979-10-02 JP JP12641579A patent/JPS5650573A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130469A (en) * | 1981-02-05 | 1982-08-12 | Seiko Epson Corp | Mis type semiconductor device |
| JPS63127220A (en) * | 1986-11-17 | 1988-05-31 | Fuji Photo Optical Co Ltd | Electronic endoscope |
| JP2005333151A (en) * | 2005-06-13 | 2005-12-02 | Takashi Katoda | Electronic device and optical device having ultrafine structure made through use of focused ion beam |
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