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JPS5650571A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5650571A
JPS5650571A JP12541579A JP12541579A JPS5650571A JP S5650571 A JPS5650571 A JP S5650571A JP 12541579 A JP12541579 A JP 12541579A JP 12541579 A JP12541579 A JP 12541579A JP S5650571 A JPS5650571 A JP S5650571A
Authority
JP
Japan
Prior art keywords
film
silicon film
thickness
wafer
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12541579A
Other languages
Japanese (ja)
Inventor
Tatsumi Shirasu
Yukio Tanigaki
Yasunobu Osa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12541579A priority Critical patent/JPS5650571A/en
Priority to DE19792943150 priority patent/DE2943150A1/en
Publication of JPS5650571A publication Critical patent/JPS5650571A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To contrive the improvements in the switching characteristics and the stability of a semiconductor device and the increase of the density thereof by forming the first to third silicon oxide films and the first and the second polycrystalline silicon film on a part of the surface of a semiconductor substrate and forming directly a metallic film on the second polycrystalline silicon film. CONSTITUTION:A field oxide silicon film 92 and a gate oxide silicon film are formed by thermally oxidizing the surface of a P type silicon wafer 91. Subsequently, a polycrystalline silicon film 94 having a thickness of 1,500-2,000Angstrom is formed on the whole surface of the wafer 91 having the film 92 and a gate oxide silicon film 93 by a CVD process. Then, there are formed an oxide silicon film 95 having a thickness of 1,300-1,500Angstrom on the polycrystalline silicon film 94, and gate oxide silicon films 96, 96' having a thickness of 1,000-1,200Angstrom on the exposed wafer 91. Then, there is formed a polycrystalline silion film 97 having a thickness of approx. 500Angstrom by a CVD process on the entire surface of the wafer 91 having the films 92, 95 and 96, 96'. Thereafter, the film 97 is treated with phosphorus, and a molybdenum film 98 is, for example, formed on the surface of the film 97 by a sputtering process.
JP12541579A 1978-10-25 1979-10-01 Semiconductor device and manufacture thereof Pending JPS5650571A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12541579A JPS5650571A (en) 1979-10-01 1979-10-01 Semiconductor device and manufacture thereof
DE19792943150 DE2943150A1 (en) 1978-10-25 1979-10-25 MIS device prodn. with protective film formation on exposed metal - before doping by heat treatment of prevent oxidn. and evapn. of metal, pref. molybdenum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12541579A JPS5650571A (en) 1979-10-01 1979-10-01 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5650571A true JPS5650571A (en) 1981-05-07

Family

ID=14909532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12541579A Pending JPS5650571A (en) 1978-10-25 1979-10-01 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5650571A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190158U (en) * 1983-06-06 1984-12-17 日東化学株式会社 water drop wiping tool

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS534484A (en) * 1976-07-02 1978-01-17 Hitachi Ltd Production of semiconductor device
JPS5438782A (en) * 1977-09-01 1979-03-23 Nec Corp Production of integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS534484A (en) * 1976-07-02 1978-01-17 Hitachi Ltd Production of semiconductor device
JPS5438782A (en) * 1977-09-01 1979-03-23 Nec Corp Production of integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190158U (en) * 1983-06-06 1984-12-17 日東化学株式会社 water drop wiping tool
JPS6323028Y2 (en) * 1983-06-06 1988-06-23

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