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JPS5644193A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5644193A
JPS5644193A JP11842379A JP11842379A JPS5644193A JP S5644193 A JPS5644193 A JP S5644193A JP 11842379 A JP11842379 A JP 11842379A JP 11842379 A JP11842379 A JP 11842379A JP S5644193 A JPS5644193 A JP S5644193A
Authority
JP
Japan
Prior art keywords
level
bit line
potential
vdd
vth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11842379A
Other languages
Japanese (ja)
Other versions
JPS598911B2 (en
Inventor
Masahiko Yoshimoto
Kenji Anami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP54118423A priority Critical patent/JPS598911B2/en
Publication of JPS5644193A publication Critical patent/JPS5644193A/en
Publication of JPS598911B2 publication Critical patent/JPS598911B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To attain high-speed readout operation of MOSFET by setting the readout level of a bit line to a proper value. CONSTITUTION:On the start of readout operation, the potential of bit line 20 is at level ''L'', and that of bit line 21 at level ''H''. Since the impedance of the load of bit line 20 by two FET18,23 is great, bit line 20 is held at potential level 34 lower than the conventional level. Bit line 21 maintains precharge potential (VDD-2VTH) shown by level 33 and it is lower than conventional level (VDD-VTH), so that an ''L''-level decrease can be attained eventually. At point tON' in time when the difference between a rising column decoder output level and level ''L'' of the bit line reaches VTH, FET16 turns on, so that signals of bit lines 20 and 21 can transferred to I/O faster than before.
JP54118423A 1979-09-14 1979-09-14 semiconductor storage device Expired JPS598911B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54118423A JPS598911B2 (en) 1979-09-14 1979-09-14 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54118423A JPS598911B2 (en) 1979-09-14 1979-09-14 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5644193A true JPS5644193A (en) 1981-04-23
JPS598911B2 JPS598911B2 (en) 1984-02-28

Family

ID=14736266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54118423A Expired JPS598911B2 (en) 1979-09-14 1979-09-14 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS598911B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325338A (en) * 1991-09-04 1994-06-28 Advanced Micro Devices, Inc. Dual port memory, such as used in color lookup tables for video systems

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6152617U (en) * 1984-09-13 1986-04-09

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325338A (en) * 1991-09-04 1994-06-28 Advanced Micro Devices, Inc. Dual port memory, such as used in color lookup tables for video systems
US5576560A (en) * 1991-09-04 1996-11-19 Advanced Micro Devices, Inc. Dual port memory, such as used in color lookup tables for video systems

Also Published As

Publication number Publication date
JPS598911B2 (en) 1984-02-28

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