JPS5639543A - Manufacture of chromium mask - Google Patents
Manufacture of chromium maskInfo
- Publication number
- JPS5639543A JPS5639543A JP11490179A JP11490179A JPS5639543A JP S5639543 A JPS5639543 A JP S5639543A JP 11490179 A JP11490179 A JP 11490179A JP 11490179 A JP11490179 A JP 11490179A JP S5639543 A JPS5639543 A JP S5639543A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- mask
- chromium
- break
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To obtain a chromium mask with corrected pattern break and short by repeating the process from the formation of a resist pattern to the rough correction of the pattern break and etching twice. CONSTITUTION:The pattern of an emulsion negative is printed on mask substrate 5 with chromium or chromium oxide layer 6 and photoresist 7 coated. Break 8 of the resulting resist pattern is boldly corrected 10 by resist potting, yet pattern short 9 is left as it is. Etching and resist removal are then carried out to form a chromium mask. The whole surface of the mask is coated with photoresist 7 again, and etching and resist removal are carried out similarly. Thus, a break- and short-free chromium mask is manufctured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11490179A JPS5639543A (en) | 1979-09-07 | 1979-09-07 | Manufacture of chromium mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11490179A JPS5639543A (en) | 1979-09-07 | 1979-09-07 | Manufacture of chromium mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5639543A true JPS5639543A (en) | 1981-04-15 |
Family
ID=14649464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11490179A Pending JPS5639543A (en) | 1979-09-07 | 1979-09-07 | Manufacture of chromium mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5639543A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6054368U (en) * | 1983-09-22 | 1985-04-16 | 日本電気株式会社 | hybrid integrated circuit |
-
1979
- 1979-09-07 JP JP11490179A patent/JPS5639543A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6054368U (en) * | 1983-09-22 | 1985-04-16 | 日本電気株式会社 | hybrid integrated circuit |
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