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JPS5636186A - Stripe structure of semiconductor laser element and manufacture of said structure - Google Patents

Stripe structure of semiconductor laser element and manufacture of said structure

Info

Publication number
JPS5636186A
JPS5636186A JP11231779A JP11231779A JPS5636186A JP S5636186 A JPS5636186 A JP S5636186A JP 11231779 A JP11231779 A JP 11231779A JP 11231779 A JP11231779 A JP 11231779A JP S5636186 A JPS5636186 A JP S5636186A
Authority
JP
Japan
Prior art keywords
layer
gaas
stripe
side electrode
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11231779A
Other languages
Japanese (ja)
Inventor
Morichika Yano
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Toshiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11231779A priority Critical patent/JPS5636186A/en
Publication of JPS5636186A publication Critical patent/JPS5636186A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To eliminate distortion due to an insulating film, uniformly stimulate an active region and obtain a stable mode, by embedding a stripe structure in an element and using a p-n junction as an electrical current limiting means. CONSTITUTION:The first layer 12 of n-Ga1-xAlxAs, the second active layer 13 of n-Ba1-yAlyAs, the third layer 14 of p-Ga1-zAlzAs and the fourth layer 15 of p-GaAs are sequentially laminated on an n-GaAs substrate 11 to provide double hetero junctions. Mesa etching is then effected. The first embedded layer 16 of n-Ga1-wAlwAs, the second embedded layer 17 of p-GaAs and the third embedded layer 18 of n-GaAs are sequentially laminated on a mesa-etched part. Stripe grooves are made. Said wafer is set in a sealed-up quartz tube while a Zn diffused layer 19 is produced. A p-side electrode and an n-side electrode are then manufactured.
JP11231779A 1979-08-31 1979-08-31 Stripe structure of semiconductor laser element and manufacture of said structure Pending JPS5636186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11231779A JPS5636186A (en) 1979-08-31 1979-08-31 Stripe structure of semiconductor laser element and manufacture of said structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11231779A JPS5636186A (en) 1979-08-31 1979-08-31 Stripe structure of semiconductor laser element and manufacture of said structure

Publications (1)

Publication Number Publication Date
JPS5636186A true JPS5636186A (en) 1981-04-09

Family

ID=14583636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11231779A Pending JPS5636186A (en) 1979-08-31 1979-08-31 Stripe structure of semiconductor laser element and manufacture of said structure

Country Status (1)

Country Link
JP (1) JPS5636186A (en)

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