[go: up one dir, main page]

JPS5628526A - Current breaking semiconductor device - Google Patents

Current breaking semiconductor device

Info

Publication number
JPS5628526A
JPS5628526A JP10402879A JP10402879A JPS5628526A JP S5628526 A JPS5628526 A JP S5628526A JP 10402879 A JP10402879 A JP 10402879A JP 10402879 A JP10402879 A JP 10402879A JP S5628526 A JPS5628526 A JP S5628526A
Authority
JP
Japan
Prior art keywords
gate
current
electrodes
parallel
power source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10402879A
Other languages
Japanese (ja)
Inventor
Yoshio Terasawa
Saburo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10402879A priority Critical patent/JPS5628526A/en
Publication of JPS5628526A publication Critical patent/JPS5628526A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/125—Modifications for increasing the maximum permissible switched current in thyristor switches

Landscapes

  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To prevent destruction dependent upon local heating, by connecting main electrodes of switch elements in parallel and by connecting gate electrodes to the gate power source through individual resistances. CONSTITUTION:When the control resistance provided in the gate electrode, the gate power source voltage, and the peak-to-peak value of the current flowed to capacitor CG at a turning-off time are denoted as RG, EG and IP respectively, relation RG>EG/IP is turn. If anode current IA is increased when EG is fixed, it is necessary to reduce RG because the gate turn-off gain is fixed. Limiting resistance RG connected to gate electrode G is provided for every gate though main electrodes of semiconductor switche electrodes SM1-SM3 are connected in parallel, so that the gate current to each gate can be 1/3 of the overall gate current. Consequently, even if IA is increased, reduction of the value of RG is not required by increasing the number of parallel connections.
JP10402879A 1979-08-17 1979-08-17 Current breaking semiconductor device Pending JPS5628526A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10402879A JPS5628526A (en) 1979-08-17 1979-08-17 Current breaking semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10402879A JPS5628526A (en) 1979-08-17 1979-08-17 Current breaking semiconductor device

Publications (1)

Publication Number Publication Date
JPS5628526A true JPS5628526A (en) 1981-03-20

Family

ID=14369785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10402879A Pending JPS5628526A (en) 1979-08-17 1979-08-17 Current breaking semiconductor device

Country Status (1)

Country Link
JP (1) JPS5628526A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980206A (en) * 1982-10-29 1984-05-09 財団法人日本美容医学研究会 Apparatus for treating hair
US9775419B2 (en) 2010-05-11 2017-10-03 L'oreal Hair treatment method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980206A (en) * 1982-10-29 1984-05-09 財団法人日本美容医学研究会 Apparatus for treating hair
US9775419B2 (en) 2010-05-11 2017-10-03 L'oreal Hair treatment method

Similar Documents

Publication Publication Date Title
ATE11982T1 (en) SHORT-CIRCUIT PROTECTION DEVICE FOR A DC CONTROLLER.
ES8104686A1 (en) Optically triggered linear bilateral switch.
JPS5418664A (en) Semiconductor switch
JPS5628526A (en) Current breaking semiconductor device
JPS522287A (en) Semiconductor switching element
JPS5286049A (en) Semiconductor switch
JPS57160148A (en) Microwave integrated circuit device
JPS5550740A (en) Semiconductor switch
JPS5239382A (en) Gate control semiconductor element
SU627591A1 (en) Switching apparatus
JPS5354909A (en) Cut-off circuit
JPS5646338A (en) Thyristor trigger circuit
JPS56137406A (en) Extension system of switch function
JPS5757028A (en) Driving circuit
JPS5757029A (en) Semiconductor switch
JPS5684033A (en) Gate circuit of gate turn-off thyristor
SU462227A1 (en) Output protection element
JPS5217761A (en) Semiconductor universal - direction switch
JPS5757030A (en) Semiconductor switch
JPS5526725A (en) Horizontal deflecting circuit with overcurrent protection circuit
JPS5475977A (en) Amplifier circuit
JPS55125077A (en) Optical switching element
JPS53132752A (en) Constant current circuit
JPS55164320A (en) Temperature detecting circuit
JPS5628525A (en) Power semiconductor switch device