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JPS5627954A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5627954A
JPS5627954A JP10399779A JP10399779A JPS5627954A JP S5627954 A JPS5627954 A JP S5627954A JP 10399779 A JP10399779 A JP 10399779A JP 10399779 A JP10399779 A JP 10399779A JP S5627954 A JPS5627954 A JP S5627954A
Authority
JP
Japan
Prior art keywords
iil
npn transistor
serves
wells
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10399779A
Other languages
Japanese (ja)
Inventor
Toshihiro Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10399779A priority Critical patent/JPS5627954A/en
Publication of JPS5627954A publication Critical patent/JPS5627954A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the injection efficiency of an IIL, and to increase the amplification factor of an inverse NPN transistor by forming the IIL and the other kinds of semiconductor elements on one substrate by using the P<->well. CONSTITUTION:P<-> wells 8 and 10 which are connected to a P<->substrate 1 from the surface of an N<-> epitaxial layer 3 are formed, and, at the same time, a P<->well 9 reaching an N<+>embedded layer 2 is formed. By utilizing said P<->wells 8, 9, and 10, are formed a separate region, an N-channel MOSFET, an IIL inverse NPN transistor, and a linearcircuit bipolya NPN transistor. The above-mentioned semiconductor can be used as an integrated circuit device wherein, e.g., the bipolar NPN transistor serves as a driver portion, the MOSFET serves as a memory portion, and the IIL serves as an inverter portion.
JP10399779A 1979-08-17 1979-08-17 Semiconductor device Pending JPS5627954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10399779A JPS5627954A (en) 1979-08-17 1979-08-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10399779A JPS5627954A (en) 1979-08-17 1979-08-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5627954A true JPS5627954A (en) 1981-03-18

Family

ID=14368925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10399779A Pending JPS5627954A (en) 1979-08-17 1979-08-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627954A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010179624A (en) * 2009-02-09 2010-08-19 Michio Hiuga Seal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
JPS5387186A (en) * 1977-01-12 1978-08-01 Hitachi Ltd Semiconductor ingegrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
JPS5387186A (en) * 1977-01-12 1978-08-01 Hitachi Ltd Semiconductor ingegrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010179624A (en) * 2009-02-09 2010-08-19 Michio Hiuga Seal

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