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JPS5618422A - Measuring method for diameter of electron beam - Google Patents

Measuring method for diameter of electron beam

Info

Publication number
JPS5618422A
JPS5618422A JP9267779A JP9267779A JPS5618422A JP S5618422 A JPS5618422 A JP S5618422A JP 9267779 A JP9267779 A JP 9267779A JP 9267779 A JP9267779 A JP 9267779A JP S5618422 A JPS5618422 A JP S5618422A
Authority
JP
Japan
Prior art keywords
electron beam
value
diameter
established
values
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9267779A
Other languages
English (en)
Inventor
Yasuo Kato
Genya Matsuoka
Tsuneo Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP9267779A priority Critical patent/JPS5618422A/ja
Priority to US06/163,295 priority patent/US4336597A/en
Publication of JPS5618422A publication Critical patent/JPS5618422A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261Details
    • H01J37/265Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
JP9267779A 1979-07-23 1979-07-23 Measuring method for diameter of electron beam Pending JPS5618422A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9267779A JPS5618422A (en) 1979-07-23 1979-07-23 Measuring method for diameter of electron beam
US06/163,295 US4336597A (en) 1979-07-23 1980-06-26 Method and system for measuring the diameter of an electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9267779A JPS5618422A (en) 1979-07-23 1979-07-23 Measuring method for diameter of electron beam

Publications (1)

Publication Number Publication Date
JPS5618422A true JPS5618422A (en) 1981-02-21

Family

ID=14061108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9267779A Pending JPS5618422A (en) 1979-07-23 1979-07-23 Measuring method for diameter of electron beam

Country Status (2)

Country Link
US (1) US4336597A (ja)
JP (1) JPS5618422A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139924A (en) * 1981-02-23 1982-08-30 Hitachi Ltd Drawing device by electron beam
JPH01114783A (ja) * 1987-10-29 1989-05-08 Hitachi Ltd イオンマイクロアナライザの一次イオンビーム径測定装置
JPH0210823A (ja) * 1988-06-29 1990-01-16 Toshiba Corp 半導体装置の製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147117A (ja) * 1984-01-10 1985-08-03 Fujitsu Ltd 電子ビ−ム装置の調整方法
US4602272A (en) * 1984-11-13 1986-07-22 Rca Corporation Electron beam intensity profile measuring system and method
US4675528A (en) * 1985-06-28 1987-06-23 Control Data Corporation Method for measurement of spotsize and edgewidth in electron beam lithography
JPS6483595A (en) * 1987-09-25 1989-03-29 Shinetsu Handotai Kk Device for measuring crystal diameter
US5382895A (en) * 1992-12-28 1995-01-17 Regents Of The University Of California System for tomographic determination of the power distribution in electron beams
US5602619A (en) * 1993-09-22 1997-02-11 Nikon Precision, Inc. Scanner for step and scan lithography system
US5483036A (en) * 1993-10-28 1996-01-09 Sandia Corporation Method of automatic measurement and focus of an electron beam and apparatus therefor
US5714875A (en) * 1995-02-23 1998-02-03 Atomic Energy Of Canada Limited Electron beam stop analyzer
CA2159531A1 (en) * 1995-09-29 1997-03-30 Courtland B. Lawrence Method for monitoring absorbed dose in an electron beam
DE19856384A1 (de) * 1998-12-07 2000-06-08 Siemens Ag Verfahren und Schaltungsanordnung zur Regelung des Arbeitspunktes einer Kathodenstrahlröhre
US7084399B2 (en) * 2000-07-18 2006-08-01 Hitachi, Ltd. Ion beam apparatus and sample processing method
US20020113375A1 (en) * 2001-02-20 2002-08-22 Gennady Ruderman Pressure differential sealing device
US20050047286A1 (en) * 2003-08-29 2005-03-03 Hanks Darwin Mitchel Focus error signal generation
JP2008021435A (ja) * 2006-07-11 2008-01-31 Nuflare Technology Inc 荷電粒子ビームのビーム分解能測定方法及び荷電粒子ビーム装置
FR2980845B1 (fr) * 2011-10-03 2013-10-04 Commissariat Energie Atomique Procede de determination sans contact du rayon d'un faisceau, systeme correspondant

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5489580A (en) * 1977-12-27 1979-07-16 Toshiba Corp Electron ray unit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909612A (en) * 1971-04-20 1975-09-30 Image Analysing Computers Ltd Electron beam specimen analysis
US3949228A (en) * 1973-09-19 1976-04-06 Ibm Corporation Method for controlling an electron beam
JPS5243058B2 (ja) * 1974-04-22 1977-10-28
US4086491A (en) * 1977-02-04 1978-04-25 The United States Of America As Represented By The Secretary Of The Navy Direct measurement of the electron beam of a scanning electron microscope
US4199689A (en) * 1977-12-21 1980-04-22 Tokyo Shibaura Denki Kabushiki Kaisha Electron beam exposing method and electron beam apparatus
DE2831602A1 (de) * 1978-07-19 1980-02-07 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur erfassung von strahlparametern eines periodisch ueber eine zielflaeche gefuehrten, fokussierten ladungstraegerstrahls und messverfahren unter verwendung der vorrichtung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5489580A (en) * 1977-12-27 1979-07-16 Toshiba Corp Electron ray unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139924A (en) * 1981-02-23 1982-08-30 Hitachi Ltd Drawing device by electron beam
JPH01114783A (ja) * 1987-10-29 1989-05-08 Hitachi Ltd イオンマイクロアナライザの一次イオンビーム径測定装置
JPH0210823A (ja) * 1988-06-29 1990-01-16 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US4336597A (en) 1982-06-22

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