JPS5618422A - Measuring method for diameter of electron beam - Google Patents
Measuring method for diameter of electron beamInfo
- Publication number
- JPS5618422A JPS5618422A JP9267779A JP9267779A JPS5618422A JP S5618422 A JPS5618422 A JP S5618422A JP 9267779 A JP9267779 A JP 9267779A JP 9267779 A JP9267779 A JP 9267779A JP S5618422 A JPS5618422 A JP S5618422A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- value
- diameter
- established
- values
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title abstract 7
- 238000000034 method Methods 0.000 title 1
- 230000000630 rising effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9267779A JPS5618422A (en) | 1979-07-23 | 1979-07-23 | Measuring method for diameter of electron beam |
US06/163,295 US4336597A (en) | 1979-07-23 | 1980-06-26 | Method and system for measuring the diameter of an electron beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9267779A JPS5618422A (en) | 1979-07-23 | 1979-07-23 | Measuring method for diameter of electron beam |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5618422A true JPS5618422A (en) | 1981-02-21 |
Family
ID=14061108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9267779A Pending JPS5618422A (en) | 1979-07-23 | 1979-07-23 | Measuring method for diameter of electron beam |
Country Status (2)
Country | Link |
---|---|
US (1) | US4336597A (ja) |
JP (1) | JPS5618422A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57139924A (en) * | 1981-02-23 | 1982-08-30 | Hitachi Ltd | Drawing device by electron beam |
JPH01114783A (ja) * | 1987-10-29 | 1989-05-08 | Hitachi Ltd | イオンマイクロアナライザの一次イオンビーム径測定装置 |
JPH0210823A (ja) * | 1988-06-29 | 1990-01-16 | Toshiba Corp | 半導体装置の製造方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60147117A (ja) * | 1984-01-10 | 1985-08-03 | Fujitsu Ltd | 電子ビ−ム装置の調整方法 |
US4602272A (en) * | 1984-11-13 | 1986-07-22 | Rca Corporation | Electron beam intensity profile measuring system and method |
US4675528A (en) * | 1985-06-28 | 1987-06-23 | Control Data Corporation | Method for measurement of spotsize and edgewidth in electron beam lithography |
JPS6483595A (en) * | 1987-09-25 | 1989-03-29 | Shinetsu Handotai Kk | Device for measuring crystal diameter |
US5382895A (en) * | 1992-12-28 | 1995-01-17 | Regents Of The University Of California | System for tomographic determination of the power distribution in electron beams |
US5602619A (en) * | 1993-09-22 | 1997-02-11 | Nikon Precision, Inc. | Scanner for step and scan lithography system |
US5483036A (en) * | 1993-10-28 | 1996-01-09 | Sandia Corporation | Method of automatic measurement and focus of an electron beam and apparatus therefor |
US5714875A (en) * | 1995-02-23 | 1998-02-03 | Atomic Energy Of Canada Limited | Electron beam stop analyzer |
CA2159531A1 (en) * | 1995-09-29 | 1997-03-30 | Courtland B. Lawrence | Method for monitoring absorbed dose in an electron beam |
DE19856384A1 (de) * | 1998-12-07 | 2000-06-08 | Siemens Ag | Verfahren und Schaltungsanordnung zur Regelung des Arbeitspunktes einer Kathodenstrahlröhre |
US7084399B2 (en) * | 2000-07-18 | 2006-08-01 | Hitachi, Ltd. | Ion beam apparatus and sample processing method |
US20020113375A1 (en) * | 2001-02-20 | 2002-08-22 | Gennady Ruderman | Pressure differential sealing device |
US20050047286A1 (en) * | 2003-08-29 | 2005-03-03 | Hanks Darwin Mitchel | Focus error signal generation |
JP2008021435A (ja) * | 2006-07-11 | 2008-01-31 | Nuflare Technology Inc | 荷電粒子ビームのビーム分解能測定方法及び荷電粒子ビーム装置 |
FR2980845B1 (fr) * | 2011-10-03 | 2013-10-04 | Commissariat Energie Atomique | Procede de determination sans contact du rayon d'un faisceau, systeme correspondant |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5489580A (en) * | 1977-12-27 | 1979-07-16 | Toshiba Corp | Electron ray unit |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3909612A (en) * | 1971-04-20 | 1975-09-30 | Image Analysing Computers Ltd | Electron beam specimen analysis |
US3949228A (en) * | 1973-09-19 | 1976-04-06 | Ibm Corporation | Method for controlling an electron beam |
JPS5243058B2 (ja) * | 1974-04-22 | 1977-10-28 | ||
US4086491A (en) * | 1977-02-04 | 1978-04-25 | The United States Of America As Represented By The Secretary Of The Navy | Direct measurement of the electron beam of a scanning electron microscope |
US4199689A (en) * | 1977-12-21 | 1980-04-22 | Tokyo Shibaura Denki Kabushiki Kaisha | Electron beam exposing method and electron beam apparatus |
DE2831602A1 (de) * | 1978-07-19 | 1980-02-07 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zur erfassung von strahlparametern eines periodisch ueber eine zielflaeche gefuehrten, fokussierten ladungstraegerstrahls und messverfahren unter verwendung der vorrichtung |
-
1979
- 1979-07-23 JP JP9267779A patent/JPS5618422A/ja active Pending
-
1980
- 1980-06-26 US US06/163,295 patent/US4336597A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5489580A (en) * | 1977-12-27 | 1979-07-16 | Toshiba Corp | Electron ray unit |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57139924A (en) * | 1981-02-23 | 1982-08-30 | Hitachi Ltd | Drawing device by electron beam |
JPH01114783A (ja) * | 1987-10-29 | 1989-05-08 | Hitachi Ltd | イオンマイクロアナライザの一次イオンビーム径測定装置 |
JPH0210823A (ja) * | 1988-06-29 | 1990-01-16 | Toshiba Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US4336597A (en) | 1982-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5618422A (en) | Measuring method for diameter of electron beam | |
JPS53110553A (en) | Measurement apparatus of gradients of curved faces | |
JPS5693079A (en) | Measurement of time duration | |
JPS53145525A (en) | Optical character reader | |
JPS5571024A (en) | Mark sensing method | |
JPS5262043A (en) | Automatic testing instrument | |
JPS53128363A (en) | Flow meter of eddy current type | |
JPS5583803A (en) | Dimension measuring unit | |
JPS53106163A (en) | Electron beam meter | |
JPS5580013A (en) | Signal measuring device | |
JPS55112560A (en) | Ion concentration automatic measuring unit | |
JPS542168A (en) | Detecting method of electromagnetic field characteristic | |
JPS55131718A (en) | Measuring device | |
JPS5262070A (en) | Measurement of observation waveforms of oscilloscope | |
JPS56114713A (en) | Automatic sensitivity setting system in measuring device | |
JPS53106162A (en) | Electron beam meter | |
JPS5523480A (en) | Measuring instrument for modulation degree | |
JPS524264A (en) | Size measuring unit | |
JPS5387293A (en) | Leakage detector | |
JPS524276A (en) | Two-signal distortion measuring circuit | |
JPS5658666A (en) | Avometer having impedance range | |
JPS5396445A (en) | Measuring device for ground resistance | |
JPS55155223A (en) | Measuring method of main stress of magnetic material | |
JPS54143178A (en) | Magnetic characteristic meter | |
JPS5465597A (en) | Method and apparatus for detecting end point of titration |