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JPS56164572A - Beveling process of semiconductor element - Google Patents

Beveling process of semiconductor element

Info

Publication number
JPS56164572A
JPS56164572A JP6831380A JP6831380A JPS56164572A JP S56164572 A JPS56164572 A JP S56164572A JP 6831380 A JP6831380 A JP 6831380A JP 6831380 A JP6831380 A JP 6831380A JP S56164572 A JPS56164572 A JP S56164572A
Authority
JP
Japan
Prior art keywords
wafer
semiconductor element
mask
etched
end edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6831380A
Other languages
Japanese (ja)
Inventor
Yasuhide Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP6831380A priority Critical patent/JPS56164572A/en
Publication of JPS56164572A publication Critical patent/JPS56164572A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To prevent the cut-out at the end edge of a wafer and to obtain high withstand voltage of the semiconductor element by a method wherein a mask is applied to the exposed face of junction to form a double positive bevel. CONSTITUTION:An Al mask MK having an window Wd is applied to the exposed part of junctions. The wafer S is etched with a liquid of nitric acid, fluoric acid group, and etching is continued till the junctions J1, J2 form positive bevel together. At this time, in the neighborhood of the window, ahe wafer is etched as to be turned in. After the Al mask is removed by etching, the end edge part is etched lightly with the liquid of nitric acid, fluoric acid gorup. By this constituion, surface electric field can be made smaller than internal electric field to enhance withstand voltage of the semiconductor element, and cut-outs at the end edge of the wafer is reduced as compared with sand blast process.
JP6831380A 1980-05-22 1980-05-22 Beveling process of semiconductor element Pending JPS56164572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6831380A JPS56164572A (en) 1980-05-22 1980-05-22 Beveling process of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6831380A JPS56164572A (en) 1980-05-22 1980-05-22 Beveling process of semiconductor element

Publications (1)

Publication Number Publication Date
JPS56164572A true JPS56164572A (en) 1981-12-17

Family

ID=13370193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6831380A Pending JPS56164572A (en) 1980-05-22 1980-05-22 Beveling process of semiconductor element

Country Status (1)

Country Link
JP (1) JPS56164572A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198073A (en) * 1988-02-03 1989-08-09 Nippon Inter Electronics Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132042A (en) * 1979-03-31 1980-10-14 Tohoku Metal Ind Ltd Manufacture of bevel semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132042A (en) * 1979-03-31 1980-10-14 Tohoku Metal Ind Ltd Manufacture of bevel semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198073A (en) * 1988-02-03 1989-08-09 Nippon Inter Electronics Corp Manufacture of semiconductor device

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