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JPS56160396A - Zone melting method - Google Patents

Zone melting method

Info

Publication number
JPS56160396A
JPS56160396A JP6156580A JP6156580A JPS56160396A JP S56160396 A JPS56160396 A JP S56160396A JP 6156580 A JP6156580 A JP 6156580A JP 6156580 A JP6156580 A JP 6156580A JP S56160396 A JPS56160396 A JP S56160396A
Authority
JP
Japan
Prior art keywords
solid body
melting zone
zone
small
arrow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6156580A
Other languages
Japanese (ja)
Other versions
JPS6354677B2 (en
Inventor
Masanobu Watanabe
Takitaro Morikawa
Junichi Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP6156580A priority Critical patent/JPS56160396A/en
Publication of JPS56160396A publication Critical patent/JPS56160396A/en
Publication of JPS6354677B2 publication Critical patent/JPS6354677B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a solid body of very high purity by concentrating energy of laser beams on a very small melting zone when a solid body is highly purified by relatively moving the melting zone.
CONSTITUTION: Laser beams 2 emitted from a laser emitting source 1 are passed through a light path changing means 4 and a lens 5 and irradiate a sample 3 at a small beam diameter. The sample 3 is then rotated in the arrow R direction to form a melting zone 31 having a very small width. In this state the zone 31 is relatively moved in the arrow F direction. With the movement impurities are moved and segregated at an edge part, so a solid body of very high purity is obtd. at a central part.
COPYRIGHT: (C)1981,JPO&Japio
JP6156580A 1980-05-09 1980-05-09 Zone melting method Granted JPS56160396A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6156580A JPS56160396A (en) 1980-05-09 1980-05-09 Zone melting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6156580A JPS56160396A (en) 1980-05-09 1980-05-09 Zone melting method

Publications (2)

Publication Number Publication Date
JPS56160396A true JPS56160396A (en) 1981-12-10
JPS6354677B2 JPS6354677B2 (en) 1988-10-28

Family

ID=13174760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6156580A Granted JPS56160396A (en) 1980-05-09 1980-05-09 Zone melting method

Country Status (1)

Country Link
JP (1) JPS56160396A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022249223A1 (en) * 2021-05-24 2022-12-01 日本電信電話株式会社 Crystal growing device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4993280A (en) * 1973-01-10 1974-09-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4993280A (en) * 1973-01-10 1974-09-05

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022249223A1 (en) * 2021-05-24 2022-12-01 日本電信電話株式会社 Crystal growing device

Also Published As

Publication number Publication date
JPS6354677B2 (en) 1988-10-28

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