JPS56153745A - Method for defect evaluation on insulative thin film - Google Patents
Method for defect evaluation on insulative thin filmInfo
- Publication number
- JPS56153745A JPS56153745A JP5651880A JP5651880A JPS56153745A JP S56153745 A JPS56153745 A JP S56153745A JP 5651880 A JP5651880 A JP 5651880A JP 5651880 A JP5651880 A JP 5651880A JP S56153745 A JPS56153745 A JP S56153745A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- defect
- inspected
- voltage
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 11
- 230000007547 defect Effects 0.000 title abstract 5
- 238000011156 evaluation Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 238000005259 measurement Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To enable to accurately perform the evaluation for the measurement of the defect yielding voltage for the subject semiconductor thin film by a method wherein a metal thin film, on which a sublimating oxide is to be formed in a high- temperature oxidized atmosphere, is provided on the insulating thin film to be inspected. CONSTITUTION:The insulating thin film to be inspected 2 (an SiO2 film, for example) is formed on a conductive Si substrate using the same material and the same manufacturing method as the insulating thin film requiring an evaluation data. On the insulating thin film 2, the metal thin film 3', whereon the sublimating oxide such as an Mo, for example, is formed for use as an electrode, and a voltage VA is applied between the electrode and the substrate 1 in such manner that the VA will be increasing slowly. If the inspected thin film 2 has a defect, the current runs to that region and a hole D' is formed by heating and evaporation of the inspected thin film 2 in that region and the metal thin film 3'. The defect can be evaluated by locating and ascertaining the location of the voltage (defect yielding voltage) of the flowing current and the hole D'. By using the sublimating metal as above-mentioned, no electrode is fused and stuck on the side wall of the insulating film in the hole D' and a plurality of measurement evaluation can be performed accurately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5651880A JPS56153745A (en) | 1980-04-28 | 1980-04-28 | Method for defect evaluation on insulative thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5651880A JPS56153745A (en) | 1980-04-28 | 1980-04-28 | Method for defect evaluation on insulative thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56153745A true JPS56153745A (en) | 1981-11-27 |
Family
ID=13029332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5651880A Pending JPS56153745A (en) | 1980-04-28 | 1980-04-28 | Method for defect evaluation on insulative thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56153745A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58207649A (en) * | 1982-05-28 | 1983-12-03 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS60260835A (en) * | 1984-06-08 | 1985-12-24 | Sanyo Mokuzai Boufu Kk | Biological deterioration factor detecting method of structure |
| JPS6397237U (en) * | 1986-12-12 | 1988-06-23 | ||
| CN114171422A (en) * | 2022-02-11 | 2022-03-11 | 浙江里阳半导体有限公司 | Method for manufacturing semiconductor device and method for detecting vapor deposition defect thereof |
-
1980
- 1980-04-28 JP JP5651880A patent/JPS56153745A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58207649A (en) * | 1982-05-28 | 1983-12-03 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPH0328824B2 (en) * | 1982-05-28 | 1991-04-22 | Fujitsu Ltd | |
| JPS60260835A (en) * | 1984-06-08 | 1985-12-24 | Sanyo Mokuzai Boufu Kk | Biological deterioration factor detecting method of structure |
| JPS6397237U (en) * | 1986-12-12 | 1988-06-23 | ||
| CN114171422A (en) * | 2022-02-11 | 2022-03-11 | 浙江里阳半导体有限公司 | Method for manufacturing semiconductor device and method for detecting vapor deposition defect thereof |
| CN114171422B (en) * | 2022-02-11 | 2022-06-03 | 浙江里阳半导体有限公司 | Manufacturing method of semiconductor device and detection method of vapor deposition defect |
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