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JPS56152736A - Chemical vapor deposition device using decreased pressure - Google Patents

Chemical vapor deposition device using decreased pressure

Info

Publication number
JPS56152736A
JPS56152736A JP5663980A JP5663980A JPS56152736A JP S56152736 A JPS56152736 A JP S56152736A JP 5663980 A JP5663980 A JP 5663980A JP 5663980 A JP5663980 A JP 5663980A JP S56152736 A JPS56152736 A JP S56152736A
Authority
JP
Japan
Prior art keywords
chemical vapor
rotary pump
vapor phase
vapor deposition
deposition device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5663980A
Other languages
Japanese (ja)
Inventor
Natsuo Tsubouchi
Hiroji Harada
Wataru Wakamiya
Shigeji Kinoshita
Sumio Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5663980A priority Critical patent/JPS56152736A/en
Publication of JPS56152736A publication Critical patent/JPS56152736A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the deterioration of a rotary pump and reduce its repair time by providing a plasma generating section between a chemical vapor phase reaction section and a vacuum exhaust system of a chemical vapor deposition device using decreased pressure. CONSTITUTION:A high-frequency power source 17 of the outside is connected between the 1st and 2nd electrodes 13, 15 and a plasma generating section C is provided between the chemical vapor phase reaction section A and vacuum exhaust system B of the decompression type chemical vapor phase growing device. A reacting gas 6 is put in a plasma state. Then, the unreacted gas or reacted formed gas cracks or electrolytically dissociates, and since this reduces the absorption in the oil of a rotary pump 11 or the decomposition of the oil, the deterioration of the rotary pump is prevented and its repair times are reduced.
JP5663980A 1980-04-25 1980-04-25 Chemical vapor deposition device using decreased pressure Pending JPS56152736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5663980A JPS56152736A (en) 1980-04-25 1980-04-25 Chemical vapor deposition device using decreased pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5663980A JPS56152736A (en) 1980-04-25 1980-04-25 Chemical vapor deposition device using decreased pressure

Publications (1)

Publication Number Publication Date
JPS56152736A true JPS56152736A (en) 1981-11-26

Family

ID=13032896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5663980A Pending JPS56152736A (en) 1980-04-25 1980-04-25 Chemical vapor deposition device using decreased pressure

Country Status (1)

Country Link
JP (1) JPS56152736A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59109138U (en) * 1983-01-12 1984-07-23 クラリオン株式会社 Thin film vapor phase growth equipment
JPS6078636A (en) * 1983-10-04 1985-05-04 Ulvac Corp Plasma process apparatus utilizing chemical reaction

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59109138U (en) * 1983-01-12 1984-07-23 クラリオン株式会社 Thin film vapor phase growth equipment
JPS6078636A (en) * 1983-10-04 1985-05-04 Ulvac Corp Plasma process apparatus utilizing chemical reaction

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