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JPS56152271A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS56152271A
JPS56152271A JP4535681A JP4535681A JPS56152271A JP S56152271 A JPS56152271 A JP S56152271A JP 4535681 A JP4535681 A JP 4535681A JP 4535681 A JP4535681 A JP 4535681A JP S56152271 A JPS56152271 A JP S56152271A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4535681A
Other languages
English (en)
Inventor
Chihanii Iene
Peeru Shiyutenguru Iensu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS56152271A publication Critical patent/JPS56152271A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
JP4535681A 1980-03-28 1981-03-27 Field effect transistor Pending JPS56152271A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803012185 DE3012185A1 (de) 1980-03-28 1980-03-28 Feldeffekttransistor

Publications (1)

Publication Number Publication Date
JPS56152271A true JPS56152271A (en) 1981-11-25

Family

ID=6098710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4535681A Pending JPS56152271A (en) 1980-03-28 1981-03-27 Field effect transistor

Country Status (4)

Country Link
US (1) US4561003A (ja)
EP (1) EP0037105B1 (ja)
JP (1) JPS56152271A (ja)
DE (2) DE3012185A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965483A (ja) * 1982-09-07 1984-04-13 ゼネラル・エレクトリック・カンパニイ 縦型ｍｏｓｆｅｔ装置
JPS61196578A (ja) * 1985-02-25 1986-08-30 ゼネラル・エレクトリック・カンパニイ 絶縁ゲート電界効果トランジスタ装置
JPH0666421B2 (ja) * 1982-02-09 1994-08-24 ウエスタ−ン エレクトリツク カムパニ−，インコ−ポレ−テツド スイツチング装置
JP2009094314A (ja) * 2007-10-10 2009-04-30 Mitsubishi Electric Corp 縦型ｍｏｓｆｅｔ構造の半導体装置
JP2022136098A (ja) * 2016-05-23 2022-09-15 ゼネラル・エレクトリック・カンパニイ ボディ領域拡張部を用いた炭化ケイ素金属酸化物半導体（ｍｏｓ）デバイスセルにおける電界シールド

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4503598A (en) * 1982-05-20 1985-03-12 Fairchild Camera & Instrument Corporation Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
NL8204105A (nl) * 1982-10-25 1984-05-16 Philips Nv Halfgeleiderinrichting.
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
NL8302092A (nl) * 1983-06-13 1985-01-02 Philips Nv Halfgeleiderinrichting bevattende een veldeffekttransistor.
JPS6010677A (ja) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
US4639762A (en) * 1984-04-30 1987-01-27 Rca Corporation MOSFET with reduced bipolar effects
GB2165090A (en) * 1984-09-26 1986-04-03 Philips Electronic Associated Improving the field distribution in high voltage semiconductor devices
JPS61182264A (ja) * 1985-02-08 1986-08-14 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
US4823176A (en) * 1987-04-03 1989-04-18 General Electric Company Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
JPH07105496B2 (ja) * 1989-04-28 1995-11-13 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタ
US6603173B1 (en) 1991-07-26 2003-08-05 Denso Corporation Vertical type MOSFET
JP3156300B2 (ja) * 1991-10-07 2001-04-16 株式会社デンソー 縦型半導体装置
US5258636A (en) * 1991-12-12 1993-11-02 Power Integrations, Inc. Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
JP3016298B2 (ja) * 1992-02-26 2000-03-06 日本電気株式会社 半導体装置
US5399892A (en) * 1993-11-29 1995-03-21 Harris Corporation Mesh geometry for MOS-gated semiconductor devices
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
US6828609B2 (en) * 2001-11-09 2004-12-07 Infineon Technologies Ag High-voltage semiconductor component
US6819089B2 (en) 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component
CN100555664C (zh) * 2007-06-01 2009-10-28 大连华坤科技有限公司 功率型分离器件金属氧化物半导体场效应晶体管

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
US4015278A (en) * 1974-11-26 1977-03-29 Fujitsu Ltd. Field effect semiconductor device
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666421B2 (ja) * 1982-02-09 1994-08-24 ウエスタ−ン エレクトリツク カムパニ−，インコ−ポレ−テツド スイツチング装置
JPS5965483A (ja) * 1982-09-07 1984-04-13 ゼネラル・エレクトリック・カンパニイ 縦型ｍｏｓｆｅｔ装置
JPH0455350B2 (ja) * 1982-09-07 1992-09-03 Gen Electric
JPS61196578A (ja) * 1985-02-25 1986-08-30 ゼネラル・エレクトリック・カンパニイ 絶縁ゲート電界効果トランジスタ装置
JP2009094314A (ja) * 2007-10-10 2009-04-30 Mitsubishi Electric Corp 縦型ｍｏｓｆｅｔ構造の半導体装置
JP2022136098A (ja) * 2016-05-23 2022-09-15 ゼネラル・エレクトリック・カンパニイ ボディ領域拡張部を用いた炭化ケイ素金属酸化物半導体（ｍｏｓ）デバイスセルにおける電界シールド

Also Published As

Publication number Publication date
DE3176252D1 (en) 1987-07-16
US4561003A (en) 1985-12-24
EP0037105A3 (en) 1984-08-22
EP0037105A2 (de) 1981-10-07
EP0037105B1 (de) 1987-06-10
DE3012185A1 (de) 1981-10-08

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