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JPS56150886A - Oscillating frequency stabilized semiconductor laser device - Google Patents

Oscillating frequency stabilized semiconductor laser device

Info

Publication number
JPS56150886A
JPS56150886A JP5400380A JP5400380A JPS56150886A JP S56150886 A JPS56150886 A JP S56150886A JP 5400380 A JP5400380 A JP 5400380A JP 5400380 A JP5400380 A JP 5400380A JP S56150886 A JPS56150886 A JP S56150886A
Authority
JP
Japan
Prior art keywords
resonator
substrate
external
laser element
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5400380A
Other languages
Japanese (ja)
Inventor
Takaaki Mukai
Shigeru Saito
Soichi Kobayashi
Akira Sugimura
Yoshihisa Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5400380A priority Critical patent/JPS56150886A/en
Publication of JPS56150886A publication Critical patent/JPS56150886A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To approach the temperature variation of the optical passage of a resonator to zero by mounting an external mirror substrate having a linear expansion coefficient larger than that of an external resonator on the resonator in a direction that the heat expansions of the substrate and the resonator may cancel each other with respect to the external mirror supported on the substrate. CONSTITUTION:A semiconductor laser element 4 is mounted directly on the left side projection of an external resonator body 1, and the right side end face of the laser element 4 is coated with a nonreflection coating of SiO2 or Si3N4 or the like. A condensing microlens 5 having a length of 1/4 period for converting the output light into parallel beam is provided adjacent to the right side of the laser element 4 at the left side projection, and the microlens 5 is covered with a nonreflection coating of SiO2 or Si3N4 or the like. An external mirror substrate 6 having a linear expansion coefficient larger than that of the resonator 1 is mounted on the end face of the air layer 3 of the resonator 1, and the plane mirror 7 of the substrate 6 is thus held in a direction that the heat expansions of the substrate 6 and the resonator 1 may cancel each other in combination. The temperature variation of the optical passage of the resonator 1 can be approached to zero by suitably selecting the length L4 of the substrate 6.
JP5400380A 1980-04-23 1980-04-23 Oscillating frequency stabilized semiconductor laser device Pending JPS56150886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5400380A JPS56150886A (en) 1980-04-23 1980-04-23 Oscillating frequency stabilized semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5400380A JPS56150886A (en) 1980-04-23 1980-04-23 Oscillating frequency stabilized semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS56150886A true JPS56150886A (en) 1981-11-21

Family

ID=12958407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5400380A Pending JPS56150886A (en) 1980-04-23 1980-04-23 Oscillating frequency stabilized semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS56150886A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59500248A (en) * 1982-02-09 1984-02-16 アイ、テイ−、テイ−，インダストリ−ズ　インコ−ポレ−テッド semiconductor laser
JPS605588A (en) * 1983-06-23 1985-01-12 Mitsubishi Electric Corp Semiconductor laser device
US4748632A (en) * 1982-11-05 1988-05-31 British Telecommunications Plc Method and apparatus for controlling lasers
EP1149443A1 (en) * 1998-09-11 2001-10-31 New Focus, Inc. Tunable laser
US9388807B2 (en) 2012-01-11 2016-07-12 Mitsubishi Electric Corporation Vane compressor having a second discharge port that includes an opening portion to a compression space
US9528514B2 (en) 2012-04-02 2016-12-27 Calsonic Kansei Corporation Gas compressor having an asymmetric cylinder chamber
US9695818B2 (en) 2012-06-04 2017-07-04 Calsonic Kansei Corporation Gas compressor
US9695691B2 (en) 2012-08-22 2017-07-04 Calsonic Kansei Corporation Gas compressor
US9751384B2 (en) 2011-11-24 2017-09-05 Calsonic Kansei Corporation Gas compressor with discharge section and sub-discharge section

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358786A (en) * 1976-11-06 1978-05-26 Mitsubishi Electric Corp Injection type laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358786A (en) * 1976-11-06 1978-05-26 Mitsubishi Electric Corp Injection type laser device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59500248A (en) * 1982-02-09 1984-02-16 アイ、テイ−、テイ−，インダストリ−ズ　インコ−ポレ−テッド semiconductor laser
US4583227A (en) * 1982-02-09 1986-04-15 Itt Industries, Inc. Temperature compensating semiconductor lasers
US4748632A (en) * 1982-11-05 1988-05-31 British Telecommunications Plc Method and apparatus for controlling lasers
JPS605588A (en) * 1983-06-23 1985-01-12 Mitsubishi Electric Corp Semiconductor laser device
EP1149443A1 (en) * 1998-09-11 2001-10-31 New Focus, Inc. Tunable laser
EP1149443A4 (en) * 1998-09-11 2006-03-22 New Focus Inc Tunable laser
US9751384B2 (en) 2011-11-24 2017-09-05 Calsonic Kansei Corporation Gas compressor with discharge section and sub-discharge section
US9388807B2 (en) 2012-01-11 2016-07-12 Mitsubishi Electric Corporation Vane compressor having a second discharge port that includes an opening portion to a compression space
US9528514B2 (en) 2012-04-02 2016-12-27 Calsonic Kansei Corporation Gas compressor having an asymmetric cylinder chamber
US9695818B2 (en) 2012-06-04 2017-07-04 Calsonic Kansei Corporation Gas compressor
US9695691B2 (en) 2012-08-22 2017-07-04 Calsonic Kansei Corporation Gas compressor

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