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JPS56148846A - Manufacture of circuit pattern - Google Patents

Manufacture of circuit pattern

Info

Publication number
JPS56148846A
JPS56148846A JP5308680A JP5308680A JPS56148846A JP S56148846 A JPS56148846 A JP S56148846A JP 5308680 A JP5308680 A JP 5308680A JP 5308680 A JP5308680 A JP 5308680A JP S56148846 A JPS56148846 A JP S56148846A
Authority
JP
Japan
Prior art keywords
film
conductor
circuit pattern
resist
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5308680A
Other languages
Japanese (ja)
Inventor
Mitsuru Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5308680A priority Critical patent/JPS56148846A/en
Publication of JPS56148846A publication Critical patent/JPS56148846A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a microminiature circuit pattern by covering the first conductive film on a substrate, plating the second conductive film pattern thereon, then covering a protective film on the upper and side surfaces of the second film and etching the first film. CONSTITUTION:The first conductor 2 is formed on titanium-palladium alloy or the like on a substrate 1 made of alumina, glass or the like. Then, a resist 3 is covered thereon, and a pattern is formed thereon by an exposure development. Subsequently, the second conductor 4 is formed of copper, gold or the like by an elctric plating. Further, the resist 3 is thermally shrinked to form gaps 6, and a protective film 5 is formed on the gap 6 and on the second conductor 4. The film 5 may be any which can endure against the etchant of the first conductor 2, and preferably be metal. Eventually, the resist 3 is removed, the film 5 is used as a mask to etch the first conductor 2, and a circuit pattern is obtained. Since the film 5 exists thereon, it can prevent the sidewise etching at the time of etching.
JP5308680A 1980-04-22 1980-04-22 Manufacture of circuit pattern Pending JPS56148846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5308680A JPS56148846A (en) 1980-04-22 1980-04-22 Manufacture of circuit pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5308680A JPS56148846A (en) 1980-04-22 1980-04-22 Manufacture of circuit pattern

Publications (1)

Publication Number Publication Date
JPS56148846A true JPS56148846A (en) 1981-11-18

Family

ID=12932967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5308680A Pending JPS56148846A (en) 1980-04-22 1980-04-22 Manufacture of circuit pattern

Country Status (1)

Country Link
JP (1) JPS56148846A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040028458A (en) * 2002-09-30 2004-04-03 (주)울텍 The method of Copper electroplating on the flat copper plate
EP1439575A3 (en) * 2003-01-16 2006-10-04 Matsushita Electric Industrial Co., Ltd. Semiconductor device with a lead frame and method of manufacturing the same
JP2008091454A (en) * 2006-09-29 2008-04-17 Rohm Co Ltd Semiconductor device and manufacturing method therefor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040028458A (en) * 2002-09-30 2004-04-03 (주)울텍 The method of Copper electroplating on the flat copper plate
EP1439575A3 (en) * 2003-01-16 2006-10-04 Matsushita Electric Industrial Co., Ltd. Semiconductor device with a lead frame and method of manufacturing the same
US7659634B2 (en) 2003-01-16 2010-02-09 Panasonic Corporation Lead frame, method of manufacturing the same, semiconductor device using lead frame and method of manufacturing semiconductor device
US7723161B2 (en) 2003-01-16 2010-05-25 Panasonic Corporation Lead frame, method of manufacturing the same, semiconductor device using lead frame and method of manufacturing semiconductor device
JP2008091454A (en) * 2006-09-29 2008-04-17 Rohm Co Ltd Semiconductor device and manufacturing method therefor

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