JPS56148843A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56148843A JPS56148843A JP5206780A JP5206780A JPS56148843A JP S56148843 A JPS56148843 A JP S56148843A JP 5206780 A JP5206780 A JP 5206780A JP 5206780 A JP5206780 A JP 5206780A JP S56148843 A JPS56148843 A JP S56148843A
- Authority
- JP
- Japan
- Prior art keywords
- titanium
- molybdenum
- evaporated
- substrate
- thereafter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052719 titanium Inorganic materials 0.000 abstract 4
- 239000010936 titanium Substances 0.000 abstract 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract 3
- 239000011733 molybdenum Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- QAKIDWGXFZCSRP-UHFFFAOYSA-N [Ti].[Mo].[Ti] Chemical compound [Ti].[Mo].[Ti] QAKIDWGXFZCSRP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005566 electron beam evaporation Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To form an electrode which utilizes the features of molybdenum for a semiconductor device by interposing the molybdenum between titanium thin films an forming a three-layer structure of titanium-molybdenum-titanium. CONSTITUTION:A silicon substrate 3 on which a silicon oxide film 1 and a high density region 2 are exposed on the main surface is prepared. Then, titanium 4 is evaporated by an electron beam evaporation on the main surface of the silicon substrate. Thereafter, molybdenum 5 is evaporated thereon, and titanium 6 is further evaporated thereon. Subsequently, the substrate thus evaporated is patterned by a photodetecting step to form an electrode. Then, in order to decrease the wiring resistance, te substrate is heat treated at 400-600 deg.C in an inert gas. Thereafter, silicon oxide is formed as a protection film 7 thereon by a vapor phase growth. Since the titanium layers are interposed, the films have good adherence, and no sidewise etching occurs at the time of etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5206780A JPS56148843A (en) | 1980-04-18 | 1980-04-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5206780A JPS56148843A (en) | 1980-04-18 | 1980-04-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56148843A true JPS56148843A (en) | 1981-11-18 |
Family
ID=12904460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5206780A Pending JPS56148843A (en) | 1980-04-18 | 1980-04-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56148843A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268291B1 (en) * | 1995-12-29 | 2001-07-31 | International Business Machines Corporation | Method for forming electromigration-resistant structures by doping |
-
1980
- 1980-04-18 JP JP5206780A patent/JPS56148843A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268291B1 (en) * | 1995-12-29 | 2001-07-31 | International Business Machines Corporation | Method for forming electromigration-resistant structures by doping |
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