JPS56146268A - Manufacture of semiconductor memory unit - Google Patents
Manufacture of semiconductor memory unitInfo
- Publication number
- JPS56146268A JPS56146268A JP4943780A JP4943780A JPS56146268A JP S56146268 A JPS56146268 A JP S56146268A JP 4943780 A JP4943780 A JP 4943780A JP 4943780 A JP4943780 A JP 4943780A JP S56146268 A JPS56146268 A JP S56146268A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type rom
- moreover
- manufacture
- fuse type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To intercept alpha rays and to prevent the generation of soft error by a method wherein after selective burn off work of the fuse type ROM is finished, a resin film is formed to perform the protection. CONSTITUTION:A field oxide film 2, a gate oxide film 3 are formed on a p type silicon semiconductor substrate 1, and moreover a silicon gate electrode 4G, the fuse type ROM part 4R, and besides wiring are formed. Then n<+> type impurity regions 5S, 5D and a phosphosilicic acid glass film 6 are formed, electrodes 7G, 7SR, 7D, 7R, etc., are formed and moreover a phosphosilicic acid glass film 8 is formed. Then the burning off of the fuse type ROM part 4R is performed, and the polyimide resin film 9 is formed as the protective film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4943780A JPS56146268A (en) | 1980-04-15 | 1980-04-15 | Manufacture of semiconductor memory unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4943780A JPS56146268A (en) | 1980-04-15 | 1980-04-15 | Manufacture of semiconductor memory unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56146268A true JPS56146268A (en) | 1981-11-13 |
JPH0225263B2 JPH0225263B2 (en) | 1990-06-01 |
Family
ID=12831077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4943780A Granted JPS56146268A (en) | 1980-04-15 | 1980-04-15 | Manufacture of semiconductor memory unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56146268A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209030A (en) * | 1982-05-28 | 1983-12-05 | セイコーエプソン株式会社 | Semiconductor fuse |
JPS59117157A (en) * | 1982-12-24 | 1984-07-06 | Hitachi Ltd | semiconductor equipment |
JPS6065545A (en) * | 1983-09-21 | 1985-04-15 | Hitachi Micro Comput Eng Ltd | Manufacturing method of semiconductor device |
JPS60176250A (en) * | 1984-02-23 | 1985-09-10 | Toshiba Corp | Manufacture of semiconductor device |
JPS60210850A (en) * | 1984-04-04 | 1985-10-23 | Mitsubishi Electric Corp | Method for manufacturing semiconductor integrated circuit device |
JPS60261154A (en) * | 1984-06-08 | 1985-12-24 | Hitachi Micro Comput Eng Ltd | Method for manufacturing semiconductor integrated circuit device |
JPH0286139U (en) * | 1988-12-21 | 1990-07-09 | ||
JPH07130860A (en) * | 1994-01-31 | 1995-05-19 | Hitachi Ltd | Method for manufacturing semiconductor integrated circuit device |
-
1980
- 1980-04-15 JP JP4943780A patent/JPS56146268A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209030A (en) * | 1982-05-28 | 1983-12-05 | セイコーエプソン株式会社 | Semiconductor fuse |
JPS59117157A (en) * | 1982-12-24 | 1984-07-06 | Hitachi Ltd | semiconductor equipment |
JPS6065545A (en) * | 1983-09-21 | 1985-04-15 | Hitachi Micro Comput Eng Ltd | Manufacturing method of semiconductor device |
JPS60176250A (en) * | 1984-02-23 | 1985-09-10 | Toshiba Corp | Manufacture of semiconductor device |
JPS60210850A (en) * | 1984-04-04 | 1985-10-23 | Mitsubishi Electric Corp | Method for manufacturing semiconductor integrated circuit device |
JPS60261154A (en) * | 1984-06-08 | 1985-12-24 | Hitachi Micro Comput Eng Ltd | Method for manufacturing semiconductor integrated circuit device |
JPH0286139U (en) * | 1988-12-21 | 1990-07-09 | ||
JPH07130860A (en) * | 1994-01-31 | 1995-05-19 | Hitachi Ltd | Method for manufacturing semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
JPH0225263B2 (en) | 1990-06-01 |
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