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JPS56135962A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS56135962A
JPS56135962A JP3989380A JP3989380A JPS56135962A JP S56135962 A JPS56135962 A JP S56135962A JP 3989380 A JP3989380 A JP 3989380A JP 3989380 A JP3989380 A JP 3989380A JP S56135962 A JPS56135962 A JP S56135962A
Authority
JP
Japan
Prior art keywords
layer
polycrystalline silicon
forming
lines
digit lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3989380A
Other languages
Japanese (ja)
Inventor
Tomio Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3989380A priority Critical patent/JPS56135962A/en
Priority to US06/245,728 priority patent/US4384347A/en
Priority to DE8181301226T priority patent/DE3172401D1/en
Priority to EP81301226A priority patent/EP0037227B1/en
Priority to IE707/81A priority patent/IE51238B1/en
Publication of JPS56135962A publication Critical patent/JPS56135962A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a memory structure of large capacity by forming digit lines of the conductive 3rd wiring layer running on the 1st polycrystalline silicon layer, forming file address lines in the same layer and forming row address lines in an upper layer. CONSTITUTION:One-transistor one-capacitor type memory cell wherein a capacitor electrode is formed of the 1st polycrystalline silicon layer P1 and a gate electrode of MOS transistors Q1 and Q2 of the 2nd polycrystalline silicon layer P2 is provided and groups of the memory cells are arranged on both sides of a group of sense amplifiers. While the 1st polycrystalline layer P1 is made common to all the columns, the digit lines DG1, DG2 and the file address line CL are formed of the 3rd conductive wiring layer and the row address line RL is formed of the 4th wiring layer. Since the digit lines DG1, DG2 and the edges CE1, CE2 of the capacitors C1, C2 can be made to approach each other, the integration of high degree can be performed.
JP3989380A 1980-03-28 1980-03-28 Semiconductor memory device Pending JPS56135962A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3989380A JPS56135962A (en) 1980-03-28 1980-03-28 Semiconductor memory device
US06/245,728 US4384347A (en) 1980-03-28 1981-03-20 Semiconductor memory device
DE8181301226T DE3172401D1 (en) 1980-03-28 1981-03-23 Semiconductor memory device
EP81301226A EP0037227B1 (en) 1980-03-28 1981-03-23 Semiconductor memory device
IE707/81A IE51238B1 (en) 1980-03-28 1981-03-27 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3989380A JPS56135962A (en) 1980-03-28 1980-03-28 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS56135962A true JPS56135962A (en) 1981-10-23

Family

ID=12565637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3989380A Pending JPS56135962A (en) 1980-03-28 1980-03-28 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56135962A (en)

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