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JPS56133841A - Measurement of minority carrier life time of mos semiconductor device - Google Patents

Measurement of minority carrier life time of mos semiconductor device

Info

Publication number
JPS56133841A
JPS56133841A JP3582280A JP3582280A JPS56133841A JP S56133841 A JPS56133841 A JP S56133841A JP 3582280 A JP3582280 A JP 3582280A JP 3582280 A JP3582280 A JP 3582280A JP S56133841 A JPS56133841 A JP S56133841A
Authority
JP
Japan
Prior art keywords
minority carrier
carrier life
life time
length
inversional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3582280A
Other languages
Japanese (ja)
Other versions
JPS589583B2 (en
Inventor
Tatsuzo Kawaguchi
Tsunehisa Ueno
Yoshiya Ueda
Shinji Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP3582280A priority Critical patent/JPS589583B2/en
Publication of JPS56133841A publication Critical patent/JPS56133841A/en
Publication of JPS589583B2 publication Critical patent/JPS589583B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices
    • G01R31/2639—Circuits therefor for testing other individual devices for testing field-effect devices, e.g. of MOS-capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE:To measure minority carrier life time within a short time, using the length of a balanced portion in the inversional layer region of the high frequency C-V characteristic curve obtained by converting the sweeping direction of the gate electrode of an MOS device from a forced inversional layer condition to an accumulation layer condition. CONSTITUTION:An oxide film is formd on a P type semiconductor substrate and voltage is applied to a gate electrode provided on the substrate on such conditions that a measuring signal and sweeping width are 1MHz and 10V, respectively. Then the C-V characteristic curve regarding the capacity of an MOS is measured within a short time as shown in the figure to obtain the length 1 of a balanced portion 5 in the inversional layer region of the characteristic curve and use the length to measure minority carrier life time correlative to that length 1. For this, the minority carrier life time can be measured within a much short time than before.
JP3582280A 1980-03-21 1980-03-21 Method for measuring lifetime of minority carriers in MOS semiconductor devices Expired JPS589583B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3582280A JPS589583B2 (en) 1980-03-21 1980-03-21 Method for measuring lifetime of minority carriers in MOS semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3582280A JPS589583B2 (en) 1980-03-21 1980-03-21 Method for measuring lifetime of minority carriers in MOS semiconductor devices

Publications (2)

Publication Number Publication Date
JPS56133841A true JPS56133841A (en) 1981-10-20
JPS589583B2 JPS589583B2 (en) 1983-02-22

Family

ID=12452636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3582280A Expired JPS589583B2 (en) 1980-03-21 1980-03-21 Method for measuring lifetime of minority carriers in MOS semiconductor devices

Country Status (1)

Country Link
JP (1) JPS589583B2 (en)

Also Published As

Publication number Publication date
JPS589583B2 (en) 1983-02-22

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