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JPS5613029B2 - - Google Patents

Info

Publication number
JPS5613029B2
JPS5613029B2 JP10679373A JP10679373A JPS5613029B2 JP S5613029 B2 JPS5613029 B2 JP S5613029B2 JP 10679373 A JP10679373 A JP 10679373A JP 10679373 A JP10679373 A JP 10679373A JP S5613029 B2 JPS5613029 B2 JP S5613029B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10679373A
Other languages
Japanese (ja)
Other versions
JPS5057779A (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10679373A priority Critical patent/JPS5613029B2/ja
Priority to GB3924474A priority patent/GB1474745A/en
Priority to CA208,942A priority patent/CA1060993A/en
Priority to DE2444906A priority patent/DE2444906C3/de
Publication of JPS5057779A publication Critical patent/JPS5057779A/ja
Priority to US05/705,561 priority patent/US4123771A/en
Publication of JPS5613029B2 publication Critical patent/JPS5613029B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/69IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP10679373A 1973-09-21 1973-09-21 Expired JPS5613029B2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10679373A JPS5613029B2 (de) 1973-09-21 1973-09-21
GB3924474A GB1474745A (en) 1973-09-21 1974-09-09 Nonvolatile semiconductor memory
CA208,942A CA1060993A (en) 1973-09-21 1974-09-11 Nonvolatile semiconductor memory
DE2444906A DE2444906C3 (de) 1973-09-21 1974-09-19 MNOS-Speicher-FET
US05/705,561 US4123771A (en) 1973-09-21 1976-07-15 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10679373A JPS5613029B2 (de) 1973-09-21 1973-09-21

Publications (2)

Publication Number Publication Date
JPS5057779A JPS5057779A (de) 1975-05-20
JPS5613029B2 true JPS5613029B2 (de) 1981-03-25

Family

ID=14442758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10679373A Expired JPS5613029B2 (de) 1973-09-21 1973-09-21

Country Status (4)

Country Link
JP (1) JPS5613029B2 (de)
CA (1) CA1060993A (de)
DE (1) DE2444906C3 (de)
GB (1) GB1474745A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458376A (en) * 1977-10-19 1979-05-11 Agency Of Ind Science & Technol Semiconductor memory unit and its writing method
US4375087C1 (en) * 1980-04-09 2002-01-01 Hughes Aircraft Co Electrically erasable programmable read-only memory

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1175601A (en) * 1966-03-28 1969-12-23 Matsushita Electronics Corp Insulated-Gate Field-Effect Transistor
DE2201028C3 (de) * 1971-01-15 1981-07-09 Intel Corp., Mountain View, Calif. Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens

Also Published As

Publication number Publication date
DE2444906B2 (de) 1981-05-27
GB1474745A (en) 1977-05-25
DE2444906A1 (de) 1975-04-24
DE2444906C3 (de) 1982-02-04
CA1060993A (en) 1979-08-21
JPS5057779A (de) 1975-05-20

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