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JPS56129321A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56129321A
JPS56129321A JP3299280A JP3299280A JPS56129321A JP S56129321 A JPS56129321 A JP S56129321A JP 3299280 A JP3299280 A JP 3299280A JP 3299280 A JP3299280 A JP 3299280A JP S56129321 A JPS56129321 A JP S56129321A
Authority
JP
Japan
Prior art keywords
film
substrate
heating
heated
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3299280A
Other languages
Japanese (ja)
Other versions
JPS6250971B2 (en
Inventor
Kiyohiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3299280A priority Critical patent/JPS56129321A/en
Publication of JPS56129321A publication Critical patent/JPS56129321A/en
Publication of JPS6250971B2 publication Critical patent/JPS6250971B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To permit power save for heating and local heating by providing a metallic thin film with a high melting point on a semiconductor substrate wherein the film is located in a high-frequency magnetic field. CONSTITUTION:A source 2 and drain 3 are diffused in an Si substrate 1 and a gate oxide film poly Si gate 5 is provided. They are covered with an Mo film 7 and with the film 7 irradiated by an electromagnetic wave of 10GHz by selecting the film thickness 1.6mu, more than 90% of electromagnetic energy is absorbed by the film 7 and temperature is increased to 1,000 deg.C in about 8.7sec and the generating calory and heat loss of the film 7 will be maintained in balanced status by adjusting the power density of the electromagnetic wave. Therefore, the surface of the substrate is heated through an insulating film 6 and heat treatment is applied to a doped poly Si 5 and ion-implantation layers 2, 3. In this composition, uniform and local heating will be permitted regardless of the material of the surface of a semiconductor device and the thin film on the glass substrate will be heated and diffused though it is impossible for laser light. As heating time is short, a shallow diffusion layer will be available and a change in density will be made a steep slope.
JP3299280A 1980-03-14 1980-03-14 Manufacture of semiconductor device Granted JPS56129321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3299280A JPS56129321A (en) 1980-03-14 1980-03-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3299280A JPS56129321A (en) 1980-03-14 1980-03-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56129321A true JPS56129321A (en) 1981-10-09
JPS6250971B2 JPS6250971B2 (en) 1987-10-28

Family

ID=12374346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3299280A Granted JPS56129321A (en) 1980-03-14 1980-03-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56129321A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922323A (en) * 1982-07-28 1984-02-04 Fujitsu Ltd Manufacturing method of semiconductor device
JPS60257124A (en) * 1984-06-01 1985-12-18 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS61113768A (en) * 1984-11-07 1986-05-31 Mitsubishi Electric Corp Method for annealing thin metallic film
JPS6293927A (en) * 1985-10-08 1987-04-30 バリアン・アソシエイツ・インコ−ポレイテツド Doping of semiconductor wafer by quick heat treatment of solid flat diffusion source
US6537864B1 (en) 1999-10-19 2003-03-25 Sanyo Electric Co., Ltd. Method of fabricating a thin film transistor using electromagnetic wave heating of an amorphous semiconductor film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922323A (en) * 1982-07-28 1984-02-04 Fujitsu Ltd Manufacturing method of semiconductor device
JPS60257124A (en) * 1984-06-01 1985-12-18 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS61113768A (en) * 1984-11-07 1986-05-31 Mitsubishi Electric Corp Method for annealing thin metallic film
JPS6293927A (en) * 1985-10-08 1987-04-30 バリアン・アソシエイツ・インコ−ポレイテツド Doping of semiconductor wafer by quick heat treatment of solid flat diffusion source
US6537864B1 (en) 1999-10-19 2003-03-25 Sanyo Electric Co., Ltd. Method of fabricating a thin film transistor using electromagnetic wave heating of an amorphous semiconductor film

Also Published As

Publication number Publication date
JPS6250971B2 (en) 1987-10-28

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