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JPS56125845A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS56125845A
JPS56125845A JP3017280A JP3017280A JPS56125845A JP S56125845 A JPS56125845 A JP S56125845A JP 3017280 A JP3017280 A JP 3017280A JP 3017280 A JP3017280 A JP 3017280A JP S56125845 A JPS56125845 A JP S56125845A
Authority
JP
Japan
Prior art keywords
pattern
amorphous chalcogenide
ion
metal
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3017280A
Other languages
Japanese (ja)
Inventor
Akira Yoshikawa
Akitsu Takeda
Osamu Ochi
Tomoko Kuki
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3017280A priority Critical patent/JPS56125845A/en
Publication of JPS56125845A publication Critical patent/JPS56125845A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0044—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists involving an interaction between the metallic and non-metallic component, e.g. photodope systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To form an amorphous chalcogenide pattern by a simple process by a method wherein a metal is ion-injected for a desired pattern into the amorphous chalcogenide layer formed on a substrate, and a non-injected region is removed by etching. CONSTITUTION:After the amorphous chalcogenide layer 13 comprising a binary system of Se-Ge, As-Se or ternary system of As-Se-Ge or the like is formed on the substrate 11 by a vacuum depositing method, ion-beams 14 of metal such as Ag are radiated to the desired pattern to form an Ag injected region 15, and then, a non- injection region 13 is removed by a solution etching treatment with an alkaline solution or by a plasma etching with a gas of fluorine system to form the desired amorphous chalcogenide pattern 15. Whereby since a difference is formed in chemical corrosion resistance only by the metal ion-beams radiation, the process for forming the pattern is made simple to the extreme.
JP3017280A 1980-03-10 1980-03-10 Formation of pattern Pending JPS56125845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3017280A JPS56125845A (en) 1980-03-10 1980-03-10 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3017280A JPS56125845A (en) 1980-03-10 1980-03-10 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS56125845A true JPS56125845A (en) 1981-10-02

Family

ID=12296326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3017280A Pending JPS56125845A (en) 1980-03-10 1980-03-10 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS56125845A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022321A (en) * 1983-07-18 1985-02-04 Mitsubishi Electric Corp Formation of mask pattern for x-ray exposure
US6831019B1 (en) * 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022321A (en) * 1983-07-18 1985-02-04 Mitsubishi Electric Corp Formation of mask pattern for x-ray exposure
US6831019B1 (en) * 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes

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