JPS56124262A - Waveguide passage light detecting device - Google Patents
Waveguide passage light detecting deviceInfo
- Publication number
- JPS56124262A JPS56124262A JP2613580A JP2613580A JPS56124262A JP S56124262 A JPS56124262 A JP S56124262A JP 2613580 A JP2613580 A JP 2613580A JP 2613580 A JP2613580 A JP 2613580A JP S56124262 A JPS56124262 A JP S56124262A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide passage
- wave
- light
- lambdag
- length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
PURPOSE:To make it possible to detect wave length above 2mum at a temperature below room temperature, by arranging plural electrodes on photo waveguide passage on a semiconductor substrate in such a manner as to be mutually connected and taking out on an outside circuit between the substrates a current based on the light propagating the waveguide passage. CONSTITUTION:As refractive index of a semiconductor layer 2 is higher than a substrate 2 and an insulating membrane 3, a photo waveguide passage is formed, and by applying light from an end surface 6 and reflecting it on the other end, a constant wave is formed on the layer 2. By setting propagation wave length to lambdag, an electrode, whose length is: l0=(m0+k)lambdag, is provided on the waveguide passage 2. In this case, m0 is to be 0 or an integral number, that is, 1/4<k<3/4. In an outside circuit, in which m1 pieces of electrodes are arranged at intervals: l=(m+ delta)lambdag (m is to be 0 or an integral number: 0<=delta<1/4mt), m1 pieces are joined together to be connected to an electrode for outside connection, and an electronic current ip, which is accelerated (arrow) following a field strength E1 of a light wave in the waveguide passage 2, is taken out in the outside circuit connected between the substrates. It is possible to obtain a wave-length-dependent output current and to detect at normal temperature a light having a wave length of 10nm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2613580A JPS56124262A (en) | 1980-03-04 | 1980-03-04 | Waveguide passage light detecting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2613580A JPS56124262A (en) | 1980-03-04 | 1980-03-04 | Waveguide passage light detecting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56124262A true JPS56124262A (en) | 1981-09-29 |
JPH0130092B2 JPH0130092B2 (en) | 1989-06-16 |
Family
ID=12185104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2613580A Granted JPS56124262A (en) | 1980-03-04 | 1980-03-04 | Waveguide passage light detecting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56124262A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004349350A (en) * | 2003-05-20 | 2004-12-09 | Nippon Telegr & Teleph Corp <Ntt> | Photodetector and photo detector built-in silicon optical waveguide |
JP2006113201A (en) * | 2004-10-13 | 2006-04-27 | Kyocera Corp | Optical waveguide and optical waveguide substrate |
JP2006126369A (en) * | 2004-10-27 | 2006-05-18 | Sony Corp | Clock signal supplying device, semiconductor device using same, and electronic appliance |
JP2019041079A (en) * | 2017-08-29 | 2019-03-14 | 株式会社豊田中央研究所 | Light receiving element |
EP4261506A1 (en) * | 2022-04-12 | 2023-10-18 | Eidgenössische Materialprüfungs- und Forschungsanstalt | Component for building a miniaturized spectrometer and method for using it |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2879287B1 (en) * | 2004-12-15 | 2007-03-16 | Univ Grenoble 1 | INTERFERENTIAL SPEECTROSCOPIC DETECTOR AND CAMERA |
FR2889587B1 (en) * | 2005-08-08 | 2008-02-22 | Univ Grenoble 1 | SPRAY SPRAY WITH CONTRA-PROPAGATIVE WAVE |
-
1980
- 1980-03-04 JP JP2613580A patent/JPS56124262A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004349350A (en) * | 2003-05-20 | 2004-12-09 | Nippon Telegr & Teleph Corp <Ntt> | Photodetector and photo detector built-in silicon optical waveguide |
JP2006113201A (en) * | 2004-10-13 | 2006-04-27 | Kyocera Corp | Optical waveguide and optical waveguide substrate |
JP2006126369A (en) * | 2004-10-27 | 2006-05-18 | Sony Corp | Clock signal supplying device, semiconductor device using same, and electronic appliance |
JP2019041079A (en) * | 2017-08-29 | 2019-03-14 | 株式会社豊田中央研究所 | Light receiving element |
EP4261506A1 (en) * | 2022-04-12 | 2023-10-18 | Eidgenössische Materialprüfungs- und Forschungsanstalt | Component for building a miniaturized spectrometer and method for using it |
WO2023198358A1 (en) * | 2022-04-12 | 2023-10-19 | Eidgenössische Materialprüfungs- Und Forschungsanstalt | Component for building a miniaturized spectrometer and method for using it |
Also Published As
Publication number | Publication date |
---|---|
JPH0130092B2 (en) | 1989-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6435405A (en) | Light waveguide mutual connection circuit | |
US4035058A (en) | Electro-optical switch and a method of manufacturing same | |
JPS56124262A (en) | Waveguide passage light detecting device | |
KR970019008A (en) | Surface Acoustic Wave Device | |
JPS5721163A (en) | Optical sensor array device | |
WO2003076971A3 (en) | Optical energy switching device and method | |
CA1057840A (en) | Electro-optical switch and modulator | |
JPS57100761A (en) | Semiconductor light sensitive device | |
JPS56169361A (en) | Fuse type prom semiconductor device | |
JPS56126810A (en) | Preparation for light waveguide line | |
JPS57190384A (en) | Wavelength sweeping laser | |
JPS5550675A (en) | Semiconductor device | |
JPS6488402A (en) | Optical waveguide device | |
JPS57196166A (en) | Voltage measurement device | |
JPS5789712A (en) | Optical circuit | |
Duffy* et al. | Guided-wave acousto-optic interaction on proton-exchanged lithium tantalate | |
JPS57173820A (en) | Optical switch | |
JPS6455877A (en) | Thin film photovoltaic device | |
JPS6432127A (en) | Support for infrared detecting element | |
JPS5560917A (en) | Liquid crystal display device | |
JPS6459842A (en) | Semiconductor device | |
JPS5555595A (en) | Semiconductor light amplifier | |
US4077113A (en) | Method of manufacturing an electro-optical switch | |
JPS57147316A (en) | Surface acoustic wave multistrip coupler | |
JPS5630116A (en) | Photo function switch |