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JPS56121632A - Film formation - Google Patents

Film formation

Info

Publication number
JPS56121632A
JPS56121632A JP2638680A JP2638680A JPS56121632A JP S56121632 A JPS56121632 A JP S56121632A JP 2638680 A JP2638680 A JP 2638680A JP 2638680 A JP2638680 A JP 2638680A JP S56121632 A JPS56121632 A JP S56121632A
Authority
JP
Japan
Prior art keywords
atmosphere
gas
gas phase
phase reaction
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2638680A
Other languages
Japanese (ja)
Other versions
JPS6029296B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP2638680A priority Critical patent/JPS6029296B2/en
Publication of JPS56121632A publication Critical patent/JPS56121632A/en
Publication of JPS6029296B2 publication Critical patent/JPS6029296B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To form a desired film in a controlled state by cleaning-etching substrate surface in a chemically active atmosphere, thence substituting the atmosphere and performing solid phase-gas phase reaction etc. CONSTITUTION:An inert gas or mixed gases of an inert gas and hydrogen are activated by using induction energy. In this atmosphere, the surface of a substrate such as semiconductor is cleaning-etched. The atmosphere is substituted with a gas of nitride, oxide, carbide, etc. without allowing said surface to contact air. If necessary, a silicide gas and germanium compound are included simultaneously into this substituted atmosphere. A desired thin film is formed on the substrate surface having been cleaning-etched by solid phase-gas phase reaction or gas phase- gas phase reaction or gas phase reaction in this substituted atmosphere. The pure film is grown as desired by this method without contaiminating or inclusion of foreign matter.
JP2638680A 1980-03-03 1980-03-03 Film formation method Expired JPS6029296B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2638680A JPS6029296B2 (en) 1980-03-03 1980-03-03 Film formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2638680A JPS6029296B2 (en) 1980-03-03 1980-03-03 Film formation method

Publications (2)

Publication Number Publication Date
JPS56121632A true JPS56121632A (en) 1981-09-24
JPS6029296B2 JPS6029296B2 (en) 1985-07-10

Family

ID=12192086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2638680A Expired JPS6029296B2 (en) 1980-03-03 1980-03-03 Film formation method

Country Status (1)

Country Link
JP (1) JPS6029296B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897826A (en) * 1981-12-07 1983-06-10 Matsushita Electric Ind Co Ltd Semiconductor manufacturing device and washing method therefor
JPS5896096U (en) * 1981-12-22 1983-06-29 株式会社東芝 Centrifugal blower
JPS6053013A (en) * 1983-09-02 1985-03-26 Hitachi Ltd Thin film forming equipment
JPS6380525A (en) * 1986-09-24 1988-04-11 Semiconductor Energy Lab Co Ltd Formation of coat
JPH01136342A (en) * 1987-10-22 1989-05-29 Ncr Corp Semiconductor manufacturing method and nitride deposition method
US5496506A (en) * 1992-09-21 1996-03-05 Sony Corporation Process for removing fine particles
WO2004077542A1 (en) * 2003-02-28 2004-09-10 Tokyo Electron Limited Substrate processing method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897826A (en) * 1981-12-07 1983-06-10 Matsushita Electric Ind Co Ltd Semiconductor manufacturing device and washing method therefor
JPS5896096U (en) * 1981-12-22 1983-06-29 株式会社東芝 Centrifugal blower
JPS6053013A (en) * 1983-09-02 1985-03-26 Hitachi Ltd Thin film forming equipment
JPS6380525A (en) * 1986-09-24 1988-04-11 Semiconductor Energy Lab Co Ltd Formation of coat
JPH01136342A (en) * 1987-10-22 1989-05-29 Ncr Corp Semiconductor manufacturing method and nitride deposition method
US5496506A (en) * 1992-09-21 1996-03-05 Sony Corporation Process for removing fine particles
US5628954A (en) * 1992-09-21 1997-05-13 Sony Corporation Process for detecting fine particles
WO2004077542A1 (en) * 2003-02-28 2004-09-10 Tokyo Electron Limited Substrate processing method
KR100800638B1 (en) * 2003-02-28 2008-02-01 동경 엘렉트론 주식회사 Substrate Processing Method
CN100514573C (en) 2003-02-28 2009-07-15 东京毅力科创株式会社 Substrate processing method

Also Published As

Publication number Publication date
JPS6029296B2 (en) 1985-07-10

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