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JPS56115558A - Semiconductor integrated circuit and manufacture thereof - Google Patents

Semiconductor integrated circuit and manufacture thereof

Info

Publication number
JPS56115558A
JPS56115558A JP1949280A JP1949280A JPS56115558A JP S56115558 A JPS56115558 A JP S56115558A JP 1949280 A JP1949280 A JP 1949280A JP 1949280 A JP1949280 A JP 1949280A JP S56115558 A JPS56115558 A JP S56115558A
Authority
JP
Japan
Prior art keywords
region
crystallinity
insular
thin film
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1949280A
Other languages
Japanese (ja)
Inventor
Takashi Hirao
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1949280A priority Critical patent/JPS56115558A/en
Publication of JPS56115558A publication Critical patent/JPS56115558A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Recrystallisation Techniques (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To simply form a high performance and density IC by forming semiconductor thin film insular regions having different crystallinity on an insulator, forming an active element on the region having preferable crystallinity and a resistor on the region having worse crystallinity, and wiring therebetween. CONSTITUTION:An insulating film 2 is covered on the Si substrate 1, and the polycrystalline Si thin film 3 is formed on the entire surface. The thin film 3 is partly selectively removed to form insular regions 4, 5. A laser beam is irradiated only to the insular region 4, and an insular region 4' improved in the crystallinity is formed. It may also be monocrystallized. An MOSTr becoming a driver for an inverter is formed in the insular region 4' having preferable crystallinity, impurity ions are injected to the region 5 having worse crystallinity to form a resistor 13, and they are wired. Thus, high performance and high density resistance load type MOS device can be formed.
JP1949280A 1980-02-18 1980-02-18 Semiconductor integrated circuit and manufacture thereof Pending JPS56115558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1949280A JPS56115558A (en) 1980-02-18 1980-02-18 Semiconductor integrated circuit and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1949280A JPS56115558A (en) 1980-02-18 1980-02-18 Semiconductor integrated circuit and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56115558A true JPS56115558A (en) 1981-09-10

Family

ID=12000852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1949280A Pending JPS56115558A (en) 1980-02-18 1980-02-18 Semiconductor integrated circuit and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56115558A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877253A (en) * 1981-10-19 1983-05-10 インテル・コーポレーシヨン Integrated circuit resistor and method of producing same
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein
JPH078496B2 (en) * 1987-09-04 1995-02-01 アウトマティック・アパラーテ・マシーネンバウ・ゲゼルシャフト・ミット・ベシュレンクタ・ハフツング Equipment for cooling and granulating extrudates of thermoplastic materials
JP2013008988A (en) * 2010-02-05 2013-01-10 Semiconductor Energy Lab Co Ltd Semiconductor device
JPWO2012029915A1 (en) * 2010-09-02 2013-10-31 シャープ株式会社 Transistor circuit, flip-flop, signal processing circuit, driver circuit, and display device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877253A (en) * 1981-10-19 1983-05-10 インテル・コーポレーシヨン Integrated circuit resistor and method of producing same
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein
JPH078496B2 (en) * 1987-09-04 1995-02-01 アウトマティック・アパラーテ・マシーネンバウ・ゲゼルシャフト・ミット・ベシュレンクタ・ハフツング Equipment for cooling and granulating extrudates of thermoplastic materials
JP2013008988A (en) * 2010-02-05 2013-01-10 Semiconductor Energy Lab Co Ltd Semiconductor device
JPWO2012029915A1 (en) * 2010-09-02 2013-10-31 シャープ株式会社 Transistor circuit, flip-flop, signal processing circuit, driver circuit, and display device
US9030237B2 (en) 2010-09-02 2015-05-12 Sharp Kabushiki Kaisha Transistor circuit, flip-flop, signal processing circuit, driver circuit, and display device

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