JPS56114320A - Aligning method - Google Patents
Aligning methodInfo
- Publication number
- JPS56114320A JPS56114320A JP1636080A JP1636080A JPS56114320A JP S56114320 A JPS56114320 A JP S56114320A JP 1636080 A JP1636080 A JP 1636080A JP 1636080 A JP1636080 A JP 1636080A JP S56114320 A JPS56114320 A JP S56114320A
- Authority
- JP
- Japan
- Prior art keywords
- die
- aligned
- center
- step sizes
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Projection-Type Copiers In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To align the different step sizes by reading the central coordinates of the using dies aligned with the step sizes of A and B, and moving the stage by the difference in said step sizes. CONSTITUTION:In a 4-inch wafer, if the step of X and Y is 8mm., the chip (the using die) on the right of the wafer is defined at the 9th column and the 9th row. Cross marks 5 are formed at the center of a reference using die 3 and at the center of a parther die 4 which is located at the position separated by a length l from the center of the die 3 to the pattern to be aligned. If the chiop size to be copied is such that X=5.1mm. and Y=7.1mm., the using die is set at the 10th column and the 14th row. In this case, the coordinates of the using die are separated from the aligning cross by X=-0.4mm. and Y=2.2mm. as a result of the calculation and exceeds the imaging scopes of microscopes 6 and a TV monitor 7. Therefore, the stage is moved by -0.4mm. and 2.2mm., and the cross mark 5 and the pattern to be aligned 8 are aligned in the monitor 7. In this method, the highly accurate alignment can be readily accomplished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1636080A JPS56114320A (en) | 1980-02-13 | 1980-02-13 | Aligning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1636080A JPS56114320A (en) | 1980-02-13 | 1980-02-13 | Aligning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56114320A true JPS56114320A (en) | 1981-09-08 |
| JPS6255690B2 JPS6255690B2 (en) | 1987-11-20 |
Family
ID=11914165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1636080A Granted JPS56114320A (en) | 1980-02-13 | 1980-02-13 | Aligning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56114320A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6266631A (en) * | 1985-09-19 | 1987-03-26 | Nippon Kogaku Kk <Nikon> | Step and repeat exposure apparatus |
-
1980
- 1980-02-13 JP JP1636080A patent/JPS56114320A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6266631A (en) * | 1985-09-19 | 1987-03-26 | Nippon Kogaku Kk <Nikon> | Step and repeat exposure apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6255690B2 (en) | 1987-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES477151A1 (en) | Recognition apparatus | |
| JPS53111280A (en) | Mask or wafer for production of semiconductor elements and device for aligning these | |
| ES445804A1 (en) | Method and apparatus for aligning mask and wafer | |
| JPS57167651A (en) | Inspecting device for surface of semiconductor wafer | |
| JPS53117978A (en) | Automatic mask appearance inspection apparatus | |
| EP0674192A3 (en) | Integration of free-space planar optical instruments | |
| JPS56114320A (en) | Aligning method | |
| JPS566438A (en) | Electron beam exposure | |
| JPS51114822A (en) | Color tv camera color separation optical system | |
| JPS57183032A (en) | Method for wafer exposure and device thereof | |
| JPS55162219A (en) | Semiconductor wafer | |
| JPS5430026A (en) | Objective lens of high reduced scale | |
| JPS52125347A (en) | Microscope objective lens | |
| JPS57198641A (en) | Pattern detection | |
| JP2647835B2 (en) | Wafer exposure method | |
| JPS5227351A (en) | Wafer process control system | |
| JPS57132008A (en) | Measuring method for pattern size | |
| JPS5577152A (en) | Locator for bonding device | |
| JPS522339A (en) | Unnecessary portion eliminating equipment in pattern identifying equip ment | |
| JPS5375854A (en) | Production fo semiconductor device | |
| JPS5553439A (en) | Dicing treatment method | |
| JPS6442655A (en) | Structure of reticle | |
| JPS57201022A (en) | Exposing method and device for wafer | |
| JPS5765061A (en) | Reader | |
| JPS53123089A (en) | Production of semiconductor device |