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JPS56112789A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56112789A
JPS56112789A JP1581680A JP1581680A JPS56112789A JP S56112789 A JPS56112789 A JP S56112789A JP 1581680 A JP1581680 A JP 1581680A JP 1581680 A JP1581680 A JP 1581680A JP S56112789 A JPS56112789 A JP S56112789A
Authority
JP
Japan
Prior art keywords
striped
electrodes
laser elements
elements
arranged along
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1581680A
Other languages
Japanese (ja)
Inventor
Naoto Mogi
Seiji Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1581680A priority Critical patent/JPS56112789A/en
Publication of JPS56112789A publication Critical patent/JPS56112789A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable the independent drive of each element in a semiconductor element of array configuration by forming an auxiliary electrode adjacent to the striped electrode, thereby stabilizing the thermal affect between the elements constantly. CONSTITUTION:The substrate 1 is mesa etched in stripe shape from the P type GaAs layer 1b side to form a plurality of striped semiconductor laser elements 2. An ohmic common electrode 3 is formed on the entire surface of the back surface of the substrate 1. Striped electrodes 4 of predetermined width are arranged along the striping direction on the upper surface of the respective laser elements 2, and auxiliary electrodes 5 are arranged along the striped electrodes 4. A drive current is flowed to the striped electrodes 4, and a current in reverse phase to the drive current is applied to the electrodes 5 to operate the laser elements. Thus, the thermal affect of the laser elements is retained constantly always by operating the laser elements, and laser light controlled in modulation independently for lach element can be oscillated for emission.
JP1581680A 1980-02-12 1980-02-12 Semiconductor device Pending JPS56112789A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1581680A JPS56112789A (en) 1980-02-12 1980-02-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1581680A JPS56112789A (en) 1980-02-12 1980-02-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56112789A true JPS56112789A (en) 1981-09-05

Family

ID=11899366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1581680A Pending JPS56112789A (en) 1980-02-12 1980-02-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56112789A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0560358A2 (en) * 1992-03-11 1993-09-15 Sumitomo Electric Industries, Limited Semiconductor laser and process for fabricating the same
US5515391A (en) * 1994-03-07 1996-05-07 Sdl, Inc. Thermally balanced diode laser package

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0560358A2 (en) * 1992-03-11 1993-09-15 Sumitomo Electric Industries, Limited Semiconductor laser and process for fabricating the same
EP0560358A3 (en) * 1992-03-11 1994-05-18 Sumitomo Electric Industries Semiconductor laser and process for fabricating the same
US5663975A (en) * 1992-03-11 1997-09-02 Sumitomo Electric Industries, Ltd. Multi-beam semiconductor laser with separated contacts characterized by semiconductor mixed crystal and active layer
US5515391A (en) * 1994-03-07 1996-05-07 Sdl, Inc. Thermally balanced diode laser package

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