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JPS56111256A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS56111256A
JPS56111256A JP1088580A JP1088580A JPS56111256A JP S56111256 A JPS56111256 A JP S56111256A JP 1088580 A JP1088580 A JP 1088580A JP 1088580 A JP1088580 A JP 1088580A JP S56111256 A JPS56111256 A JP S56111256A
Authority
JP
Japan
Prior art keywords
capacitor
constitute
gate electrode
mis type
parallel plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1088580A
Other languages
Japanese (ja)
Inventor
Hideyuki Ozaki
Kazuhiro Shimotori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1088580A priority Critical patent/JPS56111256A/en
Publication of JPS56111256A publication Critical patent/JPS56111256A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a greater capacity in a lesser area, by making use of both a MIS type capacitor and a parallel plane capacitor. CONSTITUTION:N type semiconductor region 104, 110, an oxidized film 105, a gate electrode 106 constitute a MIS type transistor, which forms a base gate for controlling between a bit wiring 115 and a capacitor. The region 110, an oxidized film 108 and a gate electrode 107 constitute a MIS type capacitor, while the electrode 107, an oxidized film 113 and a gate electrode 114 constitute a parallel plane capacitor. By thus making use of both the parallel plane capacitor and the MIS type capacitor for the dynamic memory cell of one-transistor-one-capacitor type, a greater capacity can be obtained in a lesser area.
JP1088580A 1980-01-31 1980-01-31 Semiconductor memory device Pending JPS56111256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1088580A JPS56111256A (en) 1980-01-31 1980-01-31 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1088580A JPS56111256A (en) 1980-01-31 1980-01-31 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS56111256A true JPS56111256A (en) 1981-09-02

Family

ID=11762763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1088580A Pending JPS56111256A (en) 1980-01-31 1980-01-31 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56111256A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209156A (en) * 1982-05-31 1983-12-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS5961956A (en) * 1982-09-30 1984-04-09 Fujitsu Ltd Dynamic memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209156A (en) * 1982-05-31 1983-12-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPH0427709B2 (en) * 1982-05-31 1992-05-12 Nippon Telegraph & Telephone
JPS5961956A (en) * 1982-09-30 1984-04-09 Fujitsu Ltd Dynamic memory

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